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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FRE9260R FRE9260D FRE9260H
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| OCR Text |
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
Package
TO-258AA
Features
* 19A, -200V, RDS(on) = 0.210 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(SI) ... |
| Description |
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
19A/ -200V/ 0.210 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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| File Size |
47.04K /
6 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRE260R FRE260D FRE260H
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| OCR Text |
...= 10V, ID = 31A VGS = 10V, ID = 19A VDD = 100V, ID = 31A Pulse Width = 3s Period = 300s Rg = 10 0 < VGS < 10 (See Test Circuit) MIN 200 2.0 6 110 214 3 20 46 0.6 MAX 4.0 100 100 1 0.025 0.25 93 2.60 0.080 100 250 ns 600 300 24 440 856 12 8... |
| Description |
31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs
31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
48.34K /
6 Page |
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it Online |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BTS149 Q67060-S6503-A3 OBTS149 Q67060-S6503-A2
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| OCR Text |
...V
td = 400 ms, RI = 2 , ID=0,5*19A td = 400 ms, RI = 2 , ID= 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB:
3)
RthJC RthJA R... |
| Description |
Smart Lowside Power Switch
From old datasheet system
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| File Size |
137.14K /
10 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
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| Part No. |
APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL04 APT8020B2LLG
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| OCR Text |
...500 100 3 5
(VGS = 10V, ID = 19A)
Ohms A nA Volts
7-2004 050-7063 Rev C
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
156.54K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020LFLL APT8020B2FLL
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| OCR Text |
...000 100 3 5
(VGS = 10V, ID = 19A)
Ohms A nA Volts
5-2006 050-7078 Rev C
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
244.54K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5531SFLL APT5531BFLL
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| OCR Text |
19A 0.310
BFLL D3PAK
POWER MOS 7
(R)
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by si... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
91.18K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12057JFLL
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| OCR Text |
19A 0.570
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by ... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
165.68K /
5 Page |
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it Online |
Download Datasheet |
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Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
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| OCR Text |
... 100 500 100 3 5
(VGS = 10V, 19A)
Ohms A nA Volts
12-2003 050-7024 Rev B
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = ... |
| Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
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| File Size |
100.91K /
5 Page |
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it Online |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
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| OCR Text |
... 100 500 100 3 5
(VGS = 10V, 19A)
Ohms A nA Volts
12-2003 050-7112 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = ... |
| Description |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
101.61K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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