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  to-262 to-263 Datasheet PDF File

For to-262 to-263 Found Datasheets File :: 1402    Search Time::4.282ms    
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    2SK3355 2SK3355-S 2SK3355-Z 2SK3355-ZJ D14132EJ2V0DS00

NEC Corp.
NEC[NEC]
Part No. 2SK3355 2SK3355-S 2SK3355-Z 2SK3355-ZJ D14132EJ2V0DS00
OCR Text ...-S 2SK3355-ZJ 2SK3355-Z PACKAGE TO-220AB to-262 to-263 TO-220SMDNote FEATURES * Super low on-state resistance: RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 42 A) * Low Ciss: Ciss = 9800 pF TYP. ...
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system

File Size 77.92K  /  8 Page

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    Dionics
Part No. SBR10U40CTI SBR10U40CTF
OCR Text ...ed for low forward voltage drop to maximize efficiency in power supply applications i f(av) 10 rectangular waveform a v rrm 40 v v f @ 5a...262, to-263, and * reliable high temperature operation ito-220 packages * super barrier desig...
Description Super Barrier Rectifiers

File Size 95.47K  /  3 Page

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    CET
Part No. CEB10N4 CEF10N4 CEP10N4
OCR Text ... Lead free product is acquired. TO-220 & to-263 & to-262 package & TO-220F full-pak for through hole. D G S CEB SERIES to-263(DD-PAK) G G D S CEI SERIES to-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 85.05K  /  4 Page

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    K3294

NEC
Part No. K3294
OCR Text ...94 2SK3294-S 2SK3294-ZJ PACKAGE TO-220AB to-262 to-263(MP-25ZJ) FEATURES * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A) * Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 ...
Description Search --To 2SK3294

File Size 112.46K  /  8 Page

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    SPN80T06T262RGB SPN80T06T220TGB SPN80T06K262TGB

SYNC POWER Crop.
Part No. SPN80T06T262RGB SPN80T06T220TGB SPN80T06K262TGB
OCR Text ... process is especially tailored to minimize on-state resistance. these devices are particularly suitable for synchronous rectifier applicat...262-3l part marking to-220-3l to-263-2l to-262-3l ? 60v/80a, r ds(on) =...
Description N-Channel Enhancement Mode MOSFET

File Size 447.31K  /  9 Page

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    KOA SPEER ELECTRONICS INC
Part No. SDT310NP500C3850
OCR Text to marking + or -. ** t.c.r. measuring temperature: oc/+100c. *** thermal time constant and thermal dissipation constant are values measured...262.14 262.48 262.82 263.16 263.50 263.84 0-1-2 -3 -4 -5 -6 -7 -8 -9 1570 reader's spreads pg1-188 ...
Description RTD TEMP SENSOR-PLATINUM, 500ohm, RECTANGULAR, THROUGH HOLE MOUNT

File Size 102.46K  /  3 Page

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    2SK3305 2SK3305-S 2SK3305-ZJ D14003EJ1V0DS00

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NEC[NEC]
NEC Corp.
Part No. 2SK3305 2SK3305-S 2SK3305-ZJ D14003EJ1V0DS00
OCR Text ...05 2SK3305-S 2SK3305-ZJ PACKAGE TO-220AB to-262 to-263 DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as swit...
Description From old datasheet system
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 74.70K  /  8 Page

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    2SK3325 2SK3325-S 2SK3325-ZJ D14264EJ1V0DS00 2SK3325-Z

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SK3325 2SK3325-S 2SK3325-ZJ D14264EJ1V0DS00 2SK3325-Z
OCR Text ...25 2SK3325-S 2SK3325-ZJ PACKAGE TO-220AB to-262 to-263 FEATURES * Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) * Gate voltage rating: 30 V * Low on-state resistance RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A) ...
Description From old datasheet system
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业

File Size 75.37K  /  8 Page

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    FDB42AN15A0 FDP42AN15A0

Fairchild Semiconductor
Part No. FDB42AN15A0 FDP42AN15A0
OCR Text ...d Repetitive Pulse) * Qualified to AEC Q101 Formerly developmental type 82864 Applications * DC/DC Converters and Off-line UPS * Distri...262 Thermal Resistance Junction to Ambient TO-220,to-263,to-262 Thermal Resistance Junction to Ambie...
Description N-Channel PowerTrench ?MOSFET 150V, 35A, 42mOhm

File Size 214.34K  /  11 Page

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    NEC, Corp.
NEC Corp.
Part No. 2SJ607-Z 2SJ607-ZJ 2SJ607-S
OCR Text ...07-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB to-262 to-263 TO-220SMD Note FEATURES * Super low on-state resistance: RDS(on)1 = 11 m MAX. (VGS = -10 V, ID = -42 A) RDS(on)2 = 16 m MAX. (VGS = -4.0 V, ID = -42 A) * Low input capacitance: Cis...
Description Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,to-262,to-263
MOS FIELD EFFECT TRANSISTOR MOS场效应管

File Size 77.57K  /  8 Page

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