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  stard self refresh mode Datasheet PDF File

For stard self refresh mode Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    Samsung Electronic
Part No. M464S0924CT2 M464S1724CT2
Description 8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect

File Size 200.75K  /  26 Page

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    http://
SIEMENS AG
Part No. HYB5116165BSJ-50- HYB5116165BJ-70 HYB5116165BJ-60 HYB5118165BJ-70 Q67100-Q1109 HYB5116165BJ-50
Description 1M x 16-Bit Dynamic RAM 1k & 4k refresh
1M x 16-Bit Dynamic RAM 1k & 4k refresh

File Size 272.35K  /  26 Page

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    Integrated Silicon Solu...
Part No. IS42SM32100D IS42VM32100D
Description    Auto refresh and self refresh

File Size 536.91K  /  33 Page

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    Samsung Electronic
Part No. KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh

File Size 803.02K  /  35 Page

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    HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 HYB5118165BSJ HYB3118165BST-60 HYB3118165BSJ-50 HYB5118165BST-60 HYB5

Siemens Semiconductor Group
SIEMENS AG
Part No. HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 HYB5118165BSJ HYB3118165BST-60 HYB3118165BSJ-50 HYB5118165BST-60 HYB5118165BSJBST-50-
Description High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page mode-EDO)(1M×16动RAM)

File Size 195.10K  /  24 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M366S3253BTS-C75 M366S3253BTS
Description 32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K refresh, 3.3V Synchronous DRAMs with SPD

File Size 151.31K  /  10 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M464S1724DTS-C1L M464S1724DTS-C7A M464S1724DTS-C7C M464S1724DTS-L1H M464S1724DTS-L1L M464S1724DTS-L7A
Description 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K refresh,3.3V Synchronous DRAMs with SPD Data Sheet

File Size 86.61K  /  11 Page

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    M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M464S0924DTS-C7A M464S0924DTS-C7C M464S0924DTS-L1H M464S0924DTS-L1L M464S

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M464S0924DTS-C7A M464S0924DTS-C7C M464S0924DTS-L1H M464S0924DTS-L1L M464S0924DTS-L7A M464S0924DTS-L7C
Description 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位,4BanksK的刷新,3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K refresh, 3.3V Synchronous DRAMs with SPD Data Sheet

File Size 83.76K  /  11 Page

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    Integrated Silicon Solu...
Part No. IS45S86400F IS42S86400F
Description 8K refresh cycles every 64 ms

File Size 1,410.81K  /  68 Page

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Part No. N74F1762AB
Description refresh Counter

File Size 524.21K  /  7 Page

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