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TY Semiconductor Co., Ltd
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| Part No. |
NDS352P
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| OCR Text |
... diode forward current -0.6 a i sm maximum pulsed drain-source diode forward current -5 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.85 a (note 2 ) -0.92 -1.2 v notes: 1 . r q ja is the sum of the junction-to-c... |
| Description |
SUPERSOT-3
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| File Size |
202.62K /
3 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
NDS355AN
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| OCR Text |
... diode forward current 0.42 a i sm maximum pulsed drain-source diode forward current 10 a v sd drain-source diode forward voltage v gs = 0 v, i s =0.42 a (note 2 ) 0.8 1.2 v notes: 1 . r q ja is the sum of the junction-to-case ... |
| Description |
SUPERSOT-3
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| File Size |
203.03K /
3 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
NDC7001C
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| OCR Text |
...urrent n-ch 0.51 a p-ch -0.34 i sm maximum pulse source current (note 2) n-ch 1.5 a p-ch -1 v sd drain-source diode forward voltage v gs = 0 v, i s = 0.51 a (note 2) n-ch 0.8 1.2 v v gs = 0 v, i s = -0.34 a (note 2) p-ch -0.8 -... |
| Description |
High saturation current
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| File Size |
88.89K /
3 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
C7001C
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| OCR Text |
...urrent n-ch 0.51 a p-ch -0.34 i sm maximum pulse source current (note 2) n-ch 1.5 a p-ch -1 v sd drain-source diode forward voltage v gs = 0 v, i s = 0.51 a (note 2) n-ch 0.8 1.2 v v gs = 0 v, i s = -0.34 a (note 2) p-ch -0.8 -... |
| Description |
Dual N & P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
285.21K /
13 Page |
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it Online |
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Silan Microelectronics
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| Part No. |
SVF1N60MJ SVF1N60N
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| OCR Text |
... 1.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 1.5 4.0 a diode forward voltage v sd i s =1.0a, v gs =0v -- -- 1.5 v reverse recovery time t rr -- 246.08 -- ns reverse recovery ch... |
| Description |
600V N-CHANNEL MOSFET
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| File Size |
535.98K /
11 Page |
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it Online |
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SeCoS Halbleitertechnologie
SeCoS Halbleitertechnol...
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| Part No. |
SSG10N10 SSG10N10-15
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| OCR Text |
... pulsed source current 2,6 i sm - - 50 a v d =v g =0, force current reverse recovery time t rr - 34 - ns reverse recovery charge q rr - 47 - nc i f =7a, di/dt=100a/s , t j =25c notes: 1. the data tested by surf... |
| Description |
N-Channel Enhancement Mode Power MOSFET
N-Ch Enhancement Mode Power MOSFET
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| File Size |
1,106.29K /
4 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
BSS110D74Z BSS110D27Z BSS110D26Z
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| OCR Text |
...nt bss84 -0.13 a bss110 -0.17 i sm maximum pulsed source diode current (note 1) bss84 -0.52 a bss110 -0.68 v sd drain-source diode forward voltage v gs = 0 v, i s = -0.26 a (note 1) bss84 -0.95 -1.2 v v gs = 0 v, i s = -0.34 ... |
| Description |
170 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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| File Size |
145.34K /
7 Page |
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it Online |
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Silan Microelectronics
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| Part No. |
SVF10N60S
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| OCR Text |
...- 10 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 40 a diode forward voltage v sd i s =10a,v gs =0v -- -- 1.3 v reverse recovery time t rr -- 535.39 -- ns reverse recovery charge q... |
| Description |
600V N-CHANNEL MOSFET
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| File Size |
605.90K /
9 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1074
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| OCR Text |
...ange. this stand-alone off-line sm art swit cher concept provides a cost effective solution for smps of many applications. the benefits for...cell output ripple 0.5 v second cell output ripple 0.1 v ro*co 65 ohm* m f soft startup 5msec optoco... |
| Description |
AUXILIARY POWER SUPPLY USING VIPER20
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| File Size |
79.71K /
6 Page |
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it Online |
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