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  row.100 Datasheet PDF File

For row.100 Found Datasheets File :: 19440    Search Time::1.125ms    
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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), po...100 90 -50 13 15 0 15 100 110 -50 200K 40 80 10 60 35 0 40 85 55 60 5 10 5 -60 CMOS DRAM Units...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12
OCR Text ...ge-Circuit A7 3 A6 4 A5 5 Row Select A4 6 Memory Array 512 Rows 64x8 Columns A3 7 A2 8 A1 9 A0 10 I/O1 11 SOJ 22 OE 21 ...100% Duty CS=VIL, VIN = VIH or VIL, IOUT=0mA Min. Cycle, CS=VIH f=0MHz, CSVCC-0.2V, VINVCC-0.2V or V...
Description 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM

File Size 166.89K  /  8 Page

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ...ge-Circuit A7 3 A6 4 A5 5 Row Select A4 6 Memory Array 512 Rows 64x8 Columns A3 7 A2 8 A1 9 A0 10 I/O1 11 SOJ 22 OE 21 ...100% Duty CS=VIL, VIN = VIH or VIL, IOUT=0mA Min. Cycle, CS=VIH f=0MHz, CSVCC-0.2V, VINVCC-0.2V or V...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

File Size 180.35K  /  9 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. Al...100 90 80 2 100 90 80 70 60 50 1 100 90 80 CMOS DRAM Units KM416C4100B 130 120 110 2 130 120 1...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ...of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of...100 90 -50 13 13 0 15 10 15 10 10 100 110 -50 200K 40 85 10 60 35 0 38 83 53 60 5 10 5 Min -6 CMO...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ...of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of ...100 90 1 120 110 KM416C4104C 120 110 2 120 110 110 100 1 120 110 CMOS DRAM Units mA mA mA mA m...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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    KM62256D KM62256DLG-5 KM62256DLG-5L KM62256DLG-7 KM62256DLG-7L KM62256DLGI-7 KM62256DLGI-7L KM62256DLP-5 KM62256DLP-5L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM62256D KM62256DLG-5 KM62256DLG-5L KM62256DLG-7 KM62256DLG-7L KM62256DLGI-7 KM62256DLGI-7L KM62256DLP-5 KM62256DLP-5L KM62256DLP-7 KM62256DLP-7L KM62256DLRG-5 KM62256DLRG-5L KM62256DLRG-7 KM62256DLRG-7L KM62256DLRGI-7 KM62256DLRGI-7L KM62256DLTG-5 KM62256DLTG-5L KM62256DLTG-7 KM62256DLTG-7L KM62256DLTGI-7 KM62256DLTGI-7L
OCR Text ... 23 22 21 20 19 18 17 16 15 Row select Memory array 256 rows 128x8 columns 28-DIP 28-SOP 22 21 20 19 18 17 16 15 I/O1 I/O8 ...100% tested CAPACITANCE1) (f=1MHz, TA=25C) Item Input capacitance Input/Output capacitance 1. C...
Description 438100341
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM

File Size 169.01K  /  9 Page

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    KM681001A KM681001A-15 KM681001A-20

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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM681001A KM681001A-15 KM681001A-20
OCR Text ... A5 A6 A7 SOJ 25 24 23 Row Select A8 Memory Array 512 Rows 256x8 Columns A9 A10 I/O1 I/O2 I/O3 22 CS1 21 I/O8 20 I/O7 1...100% Duty CS1=VIL, CS2=VIH, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS1=VIH or CS2=VIL f=0MHz, CS1VCC-0...
Description 128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system

File Size 164.53K  /  9 Page

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    KM681001B KM681001B-15 KM681001B-20

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM681001B KM681001B-15 KM681001B-20
OCR Text ...I/O7 19 I/O6 18 I/O5 17 I/O4 Row Select Memory Array 512 Rows 256x8 Columns A9 A10 I/O1 13 I/O2 14 I/O3 15 Vss 16 I/O1 ~ I/O8...100% Duty CS1=VIL, CS2=VIH, VIN=VIH or VIL, IOUT=0mA Min. Cycle, CS1=VIH or CS2=VIL f=0MHz, CS1VCC-0...
Description From old datasheet system
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
128K x 8 Bit High-Speed CMOS Static RAM

File Size 180.26K  /  9 Page

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    KM681002C KM681002C-10 KM681002C-12 KM681002C-15 KM681002C-20 KM681002CI KM681002CI-10 KM681002CI-12 KM681002CI-15 KM681

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM681002C KM681002C-10 KM681002C-12 KM681002C-15 KM681002C-20 KM681002CI KM681002CI-10 KM681002CI-12 KM681002CI-15 KM681002CI-20 KM681002CJ-10 KM681002CJ-12 KM681002CJ-15 KM681002CJ-20 KM681002CL KM681002CL-10 KM681002CL-12 KM681002CL-15 KM681002CL-20 KM681002CLI KM681002CLI-10 KM681002CLI-12 KM681002CLI-15 KM681002CLI-20 KM681002CT-20 KM681002CLJ-10 KM681002CLJ-12 KM681002CLJ-15 KM681002CLJ-20 KM681002CLT-10 KM681002CLT-12 KM681002CLT-15 KM681002CLT-20 KM681002CT-10 KM681002CT-12 KM681002CT-15 KM681002CJ-20000 KM681002CJI-2000 KM681002CT-10000
OCR Text ...12 20 A11 19 A10 18 17 A9 A8 Row Select Vss Memory Array 512 Rows 256x8 Columns I/O3 10 I/O4 11 WE A4 A5 12 13 14 15 16 I/O1~...100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA 10ns 12ns 15ns 20ns Standby Current ISB ISB1 Min. Cycle, ...
Description 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围
128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 10 ns, PDSO32

File Size 197.74K  /  9 Page

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