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  rg-58 u Datasheet PDF File

For rg-58 u Found Datasheets File :: 1677    Search Time::1.093ms    
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    EL4390 EL4390C EL4390CM EL4390CN

ELANTEC[Elantec Semiconductor]
Part No. EL4390 EL4390C EL4390CM EL4390CN
OCR Text ...uare wave with AV e 5 RF e 820X RG e 200X Note 6 DC offset from b0 714V to a 0 714V AC amplitude is 286m Vp-p equivalent to 40 ire Note 7 Test fixture was designed to minimize capacitance at the INb input A ``good'' fixture should have less...
Description Triple 80 MHz Video Amplifier with DC Restore

File Size 297.00K  /  16 Page

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    HGTG30N60A4D

Fairchild Semiconductor
Part No. HGTG30N60A4D
OCR Text ...E = 30A, VCE = 390V, VGE = 15V, RG = 3, L = 200H, Test Circuit (Figure 24) TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V IC = 30A, VGE = 15...58 280 1000 450 2.2 40 30 MAX 250 2.8 2.6 2.0 7.0 250 270 360 350 200 70 1200 750 2.5 55 42 uNITS V ...
Description 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V/ SMPS Series N-Channel IGBT with

File Size 116.30K  /  9 Page

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    HGTG30N60A4

Fairchild Semiconductor
Part No. HGTG30N60A4
OCR Text ...CE = 600V VGE = 20V TJ = 150oC, RG = 3, VGE = 15V L = 100H, VCE = 600V IC = 30A, VCE = 300V IC = 30A, VCE = 300V VGE = 15V VGE = 20V Curr...58 280 1000 450 MAX 200 70 1160 750 0.27 uNITS ns ns ns ns J J J oC/W Typical Performance Curves...
Description 600V, SMPS Series N-Channel IGBT

File Size 137.91K  /  8 Page

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    HGTG30N60B3D HGT4E30N60B3DS

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. HGTG30N60B3D HGT4E30N60B3DS
OCR Text ...VCE = VGE VGE = 20V TJ = 150oC, RG = 3, VGE = 15V, L = 100H TC TC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(...
Description 60A/ 600V/ uFS Series N-Channel IGBT
60A 600V uFS Series N-Channel IGBT
60A, 600V, uFS Series N-Channel IGBT
2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN
CONNECTOR ACCESSORY 60 A, 600 V, N-CHANNEL IGBT, TO-268AA

File Size 174.29K  /  8 Page

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    HGTG30N60B3

Fairchild Semiconductor
Part No. HGTG30N60B3
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 3. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS ...58 500 550 680 190 250 800 900 V nC nC ns ns ns ns J J J Current Turn-On Delay Time Current...
Description 60A, 600V, uFS Series N-Channel IGBT

File Size 181.39K  /  8 Page

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    IRF520N

International Rectifier, Corp.
Part No. IRF520N
OCR Text ... VDD = 50V --- ID = 5.7A ns --- RG = 22 --- RD = 8.6, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center ...58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O u RC E ...
Description Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET(减振钢板基本\u003d 100伏,的Rds(on)\u003d 0.20欧姆,身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

File Size 113.03K  /  8 Page

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    IRF520V

IRF[International Rectifier]
Part No. IRF520V
OCR Text ... VDD = 50V --- ID = 9.2A ns --- RG = 18 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O u RC E ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

File Size 146.01K  /  8 Page

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    IRFR9120N IRFU9120N IRFRU9120N

IRF[International Rectifier]
Intersil Corporation
Part No. IRFR9120N IRFu9120N IRFRu9120N
OCR Text ...DD = -50V --- ID = -4.0A ns --- RG = 12 --- RD =12 , See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die...58 (.023) 0.46 (.018) LE A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOuRCE 4 - D R A IN ...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)

File Size 113.62K  /  10 Page

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    IRFZ44E IRFZ44EPBF

IRF[International Rectifier]
Part No. IRFZ44E IRFZ44EPBF
OCR Text ...- VDD = 30V --- ID = 29A ns --- RG = 15 --- RD = 1.1, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...58 4) 1.15 (.04 5) M IN 1 2 3 LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOuRCE 4 ...
Description 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

File Size 94.75K  /  8 Page

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    IRFZ44N IRFZ44 IRFZ44NPBF

IRF[International Rectifier]
Part No. IRFZ44N IRFZ44 IRFZ44NPBF
OCR Text ...- 60 --- ID = 25A ns --- 44 --- RG = 12 --- 45 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- 7.5...58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O u RC E ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

File Size 98.67K  /  8 Page

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For rg-58 u Found Datasheets File :: 1677    Search Time::1.093ms    
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