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  pseudomorphic Datasheet PDF File

For pseudomorphic Found Datasheets File :: 275    Search Time::1.578ms    
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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD6836
OCR Text ...The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 360 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure mi...
Description 0.25W POWER PHEMT

File Size 185.61K  /  2 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD750P100
OCR Text ...100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 750 m Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure min...
Description 0.5W PACKAGED POWER PHEMT

File Size 179.87K  /  3 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPDA200V
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an...
Description HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

File Size 57.15K  /  3 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP1500SOT89
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasi...
Description LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

File Size 43.63K  /  3 Page

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    Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP1500
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source a...
Description 1W POWER PHEMT

File Size 39.07K  /  2 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP3000P100
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasi...
Description PACKAGED 2W POWER PHEMT

File Size 46.54K  /  3 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP3000
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 3000 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source a...
Description 2 W POWER PHEMT

File Size 43.72K  /  2 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP6872P100-3 LP6872P100 LP6872P100-1 LP6872P100-2
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 720 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source a...
Description Packaged 0.5W Power PHEMT

File Size 22.33K  /  2 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP6872
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 720 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an...
Description 0.5W POWER PHEMT

File Size 37.34K  /  2 Page

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For pseudomorphic Found Datasheets File :: 275    Search Time::1.578ms    
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