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For polysilicon Found Datasheets File :: 1503    Search Time::1.453ms    
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    STGP10NB37LZ

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STGP10NB37LZ
OCR Text ... VCE(sat) < 1.8 V IC 20 A polysilicon GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE TO-220 3 1 2 DESCRIPTION Using the latest high voltage tec...
Description N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh IGBT
N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh⑩ IGBT

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    STGP20NB37LZ

Sharp, Corp.
STMICROELECTRONICS[STMicroelectronics]
Part No. STGP20NB37LZ
OCR Text ... CE(s at) < 2.0 V IC 20 A polysilicon GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 2 DESCRIPTION Using the latest high voltage technology based on patented...
Description N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT N通道钳位20A 220 IGBT的内部钳位PowerMESH
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT

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    STKM2000 STKM2000SERIES

STMicroelectronics
Part No. STKM2000 STKM2000SERIES
OCR Text ... silicon gate process with dual polysilicon layers and dual metal layers. This process is optimized to achieve high performance in digital CMOS applications. Depending on the operating supply voltage (10V, or 5V), the CMOS process behaves a...
Description 2 m/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS
2 u/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS

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    AD676KD AD676 AD676AD AD676BD AD676JD

AD[Analog Devices]
Part No. AD676KD AD676 AD676AD AD676BD AD676JD
OCR Text ... large "distributed" diodes and polysilicon series resistors to dissipate both high energy discharges (Human Body Model) and fast, low energy pulses (Charged Device Model). Per Method 3015.2 of MIL-STD-883C, the AD676 has been classified as...
Description From old datasheet system
16-Bit 100 kSPS Sampling ADC

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    M5M5255DP-45LL M5M5255DP-45XL M5M5255DP-55LL M5M5255DP-55XL M5M5255DP-70LL M5M5255DP-70XL M5M5255FP-45LL M5M5255FP-45XL

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M5255DP-45LL M5M5255DP-45XL M5M5255DP-55LL M5M5255DP-55XL M5M5255DP-70LL M5M5255DP-70XL M5M5255FP-45LL M5M5255FP-45XL M5M5255FP-55LL M5M5255FP-55XL M5M5255FP-70LL M5M5255FP-70XL D98026 M5M5255DFP-45LL M5M5255DFP-45XL M5M5255DFP-70LL M5M5255DFP-70XL M5M5255DFP-55LL M5M5255DFP-55XL
OCR Text ...icated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is...
Description 262 /144-BIT (32 /768-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

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    M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-12VLL-I M5M5256DFP-12VXL-I M5M5256DFP-15VLL-I M5M5256DFP-15VXL-I M5M525

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-12VLL-I M5M5256DFP-12VXL-I M5M5256DFP-15VLL-I M5M5256DFP-15VXL-I M5M5256DRV-10VLL-I M5M5256DRV-10VXL-I M5M5256DRV-12VLL-I M5M5256DRV-12VXL-I M5M5256DRV-15VLL-I M5M5256DRV-15VXL-I M5M5256DVP-10VLL-I M5M5256DVP-10VXL-I M5M5256DVP-12VLL-I M5M5256DVP-12VXL-I M5M5256DVP-15VLL-I M5M5256DVP-15VXL-I M5M5256DVP M5M5256DFP D99003
OCR Text ...icated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is...
Description From old datasheet system
262144-BIT CMOS STATIC RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM

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    M5M5256DFP-10VLL M5M5256DFP-10VXL M5M5256DFP-12VLL M5M5256DFP-12VXL M5M5256DFP-15VLL M5M5256DFP-15VXL M5M5256DRV-10VLL M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. M5M5256DFP-10VLL M5M5256DFP-10VXL M5M5256DFP-12VLL M5M5256DFP-12VXL M5M5256DFP-15VLL M5M5256DFP-15VXL M5M5256DRV-10VLL M5M5256DRV-10VXL M5M5256DRV-12VLL M5M5256DRV-12VXL M5M5256DRV-15VLL M5M5256DRV-15VXL M5M5256DVP-10VLL M5M5256DVP-10VXL M5M5256DVP-12VLL M5M5256DVP-12VXL M5M5256DVP-15VLL M5M5256DVP-15VXL D98029
OCR Text ...icated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is...
Description From old datasheet system
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 262144位(32768 - Word位)的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM

File Size 61.55K  /  7 Page

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    M5M5256DFP-70VLL-I M5M5256DFP-70VXL-I M5M5256DFP-85VLL-I M5M5256DFP-85VXL-I M5M5256DRV-70VLL-I M5M5256DRV-70VXL-I M5M525

Maxim Integrated Products, Inc.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M5256DFP-70VLL-I M5M5256DFP-70VXL-I M5M5256DFP-85VLL-I M5M5256DFP-85VXL-I M5M5256DRV-70VLL-I M5M5256DRV-70VXL-I M5M5256DRV-85VLL-I M5M5256DRV-85VXL-I M5M5256DVP-70VLL-I M5M5256DVP-70VXL-I M5M5256DVP-85VLL-I M5M5256DVP-85VXL-I D99002
OCR Text ...icated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is...
Description 32K X 8 STANDARD SRAM, 85 ns, PDSO28 8 X 13.40 MM, TSOP-28
32K X 8 STANDARD SRAM, 85 ns, PDSO28 0.450 INCH, SOP-28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM
From old datasheet system

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    M5M5256DFP-70VLL-W M5M5256DFP-85VXL-W M5M5256DRV-70VLL-W M5M5256DRV-85VXL-W M5M5256DVP-70VLL-W M5M5256DVP-85VXL-W M5256W

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. M5M5256DFP-70VLL-W M5M5256DFP-85VXL-W M5M5256DRV-70VLL-W M5M5256DRV-85VXL-W M5M5256DVP-70VLL-W M5M5256DVP-85VXL-W M5256W33 M5M5256DFP-85VLL-W M5M5256DVP-70VXL-W M5M5256DFP-70VXL-W M5M5256DRV-70VXL-W M5M5256DVP-85VLL-W M5M5256DRV-85VLL-W
OCR Text ...icated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is...
Description From old datasheet system
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-SOIC -40 to 85
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM

File Size 45.94K  /  7 Page

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    M5M5256DFP-70VLL M5M5256DFP-70VXL M5M5256DFP-85VLL M5M5256DFP-85VXL M5M5256DRV-70VLL M5M5256DRV-70VXL M5M5256DRV-85VLL M

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M5256DFP-70VLL M5M5256DFP-70VXL M5M5256DFP-85VLL M5M5256DFP-85VXL M5M5256DRV-70VLL M5M5256DRV-70VXL M5M5256DRV-85VLL M5M5256DRV-85VXL M5M5256DVP-70VLL M5M5256DVP-70VXL M5M5256DVP-85VLL M5M5256DVP-85VXL D98028
OCR Text ...icated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is...
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system

File Size 61.09K  /  7 Page

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For polysilicon Found Datasheets File :: 1503    Search Time::1.453ms    
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