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International Rectifier, Corp.
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Part No. |
IRFP040 IRF9622 IRF9612 IRFP362 IRFP343
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Description |
transistor | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC transistor | MOSFET | p-channel | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 1.5AI(四)| TO - 220AB现有 transistor | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247 transistor | MOSFET | p-channel | 200V V(BR)DSS | 900MA I(D) | TO-220AB transistor|MOSFET|p-channel|200VV(BR)DSS|1.5AI(D)|TO-220AB
transistor|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
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File Size |
42.88K /
1 Page |
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Part No. |
APT3507DN APT6014DN APT35-101DN APT3555DN APT55-101DN APT551R2DN APT5514DN APT4055DN APT75-101DN APT100-101DN APT90-101DN APT80-101DN APT60-101DN APT45-101DN APT40-101DN APT50-101DN APT752RDN APT802RDN
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Description |
transistor | MOSFET | N-CHANNEL | 350V V(BR)DSS | 60A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 600V V(BR)DSS | 43A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 350V V(BR)DSS | 25A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 350V V(BR)DSS | 12A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17.5A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 550V V(BR)DSS | 43A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 400V V(BR)DSS | 12A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 750V V(BR)DSS | 12.5A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 800V V(BR)DSS | 12.5A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17.5A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22.5A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 750V V(BR)DSS | 6A I(D) | CHIP transistor | MOSFET | N-CHANNEL | 800V V(BR)DSS | 6A I(D) | CHIP
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File Size |
66.79K /
1 Page |
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it Online |
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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Part No. |
STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI
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Description |
From old datasheet system N - CHANNEL ENHANCEMENT MODE FAST power MOS transistor Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N-Channel Enhancement Mode Fast power MOS transistor(N沟道增强模式快速功率MOSFET)
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File Size |
241.66K /
11 Page |
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it Online |
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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Part No. |
C67078-S1001-A2 BUZ15
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Description |
SIPMOS power transistor 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, power, MOSFET, TO-204AE SIPMOS power transistor SIPMOS功率晶体
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File Size |
266.96K /
7 Page |
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it Online |
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Price and Availability
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