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  non-sealed Datasheet PDF File

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    ALD1108E ALD1108EDC ALD1108EPC ALD1108ESC ALD1110E ALD1110EPA ALD1110ESA ALD1110EDA ALD1110EDC

ALD[Advanced Linear Devices]
Advanced Linear Devices, Inc.
Part No. ALD1108E ALD1108EDC ALD1108EPC ALD1108ESC ALD1110E ALD1110EPA ALD1110ESA ALD1110EDA ALD1110EDC
OCR Text ... 3.000V in 0.1mV steps Proven, non-volatile CMOS technology Typical 10 years drift of less than 2mV Usable in voltage mode or current mode ...sealed circuits * No system overhead or active circuitry required * No mechanical moving parts -- hi...
Description QUAD/DUAL EPADPRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩)
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD)
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD?
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD 双电可编程模拟器件(EPAD⑩)

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    BAS81 BAS83 BAS82

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAS81 BAS83 BAS82
OCR Text ...repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp 1 s; 0.5 tp = 1 s PARAMET...sealed glass surface mounted package; 2 connectors BAS81; BAS82; BAS83 SOD80C k (1) a...
Description Schottky barrier diodes

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    LT1085MG LT1085MIG LT1085MK LT1085MSM LT1085M LT1085MG-12 LT1085MG-05 LT1085MIG-05 LT1085MK-3V3

TT electronics Semelab, Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. LT1085MG LT1085MIG LT1085MK LT1085MSM LT1085M LT1085MG-12 LT1085MG-05 LT1085MIG-05 LT1085MK-3V3
OCR Text ...O-3,SMD1 and TO-257 (isolated & non-isolated) Packages. * Military Temperature Range (-55 to +150C) DEVICE(1) LT1085MK-XX LT1085MG-XX LT108...sealed TO-3 packages are utilised for high reliablitiy and low thermal resistance, whilst the SMD1 p...
Description Voltage Regulator 12 V FIXED POSITIVE LDO REGULATOR, 1.5 V DROPOUT, PSFM3
5.0 AMP POSITIVE VOLTAGE REGULATOR
3 AMP POSITIVE VOLTAGE REGULATOR

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    TORX178S

TOSHIBA[Toshiba Semiconductor]
Part No. TORX178S
OCR Text ...4 dBm mA V V Note 2: When non-modulated signal (optical all high or all low level signal) is inputted, output signal is unstable. When...sealed and has its wire fixed by resin. This structure is relatively resistant to vibration and shoc...
Description FIBER OPTIC RECEIVING MODULE

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    PC354 PC354NT

Sharp Electrionic Component...
Sharp Corporation
SHARP[Sharp Electrionic Components]
Part No. PC354 PC354NT
OCR Text ...incorporates with electrical non-coherent light emitting This product shall not contain the following materials. Also, the followin...sealed heat-pressed the carrier tape of protect against static electricity. (2) Reel structure and D...
Description DEVICE SPECIFICATION FOR PHOTOCOUPLER

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    1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N4003 1N4007 1N4001 1N4003G 1N4004 1N4005 1N4005G 1N4006G

PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
Part No. 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N4003 1N4007 1N4001 1N4003G 1N4004 1N4005 1N4005G 1N4006G
OCR Text ...repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature Tamb = 75 C; see Fig.2 half sinewave; 60 Hz 1996 May 24 2 Philips Semiconductors Product specification Rectifiers...
Description Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE

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    1N4007ID 1N4004ID 1N4001ID 1N4002ID 1N4003ID 1N4005ID 1N4006ID 1N4007IDEB

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. 1N4007ID 1N4004ID 1N4001ID 1N4002ID 1N4003ID 1N4005ID 1N4006ID 1N4007IDEB
OCR Text ...ak forward current - 10 a i fsm non-repetitive peak forward current half sinewave; 60 hz - 20 a t stg storage temperature - 65 +175 c t j junction temperature - 65 +175 c 1996 jun 10 3 philips semiconductors product speci?cation recti?e...
Description Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:31; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:24-31
Rectifiers

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    BAX18

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Philipss
Part No. BAX18
OCR Text ...repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total p...
Description General purpose diode

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    BYV26C BYV26A BYV26E BYV26 BYV26B BYV26F BYV26G

Philips Semiconductors
Part No. BYV26C BYV26A BYV26E BYV26 BYV26B BYV26F BYV26G
OCR Text ... BYV26F and G IFSM ERSM Tstg Tj non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax non-repetitive peak reverse avalanche energy storage temperature junction temperature see Figs 12 and 13 ...
Description Fast soft-recovery controlled avalanche rectifiers

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    BYV27-50 BYV27-200 BYV27-100 BYV27-150

GE Security, Inc.
GE[General Semiconductor]
Part No. BYV27-50 BYV27-200 BYV27-100 BYV27-150
OCR Text ...RRENT, AMPERES FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 3.0 AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RESISTIVE OR INDUCTIVE LOAD 60 50 40 30 20 10 0 1 10 10ms SINGLE HALF SINE-WAVE TJ=175C 2.5 2.0 1.5 1.0...
Description GLASS PASSIVATED FAST EFFICIENT RECTIFIER

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