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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
BU808DFP
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| OCR Text |
...ation. It is manufactured using multiepitaxial Mesa technology for cost-effective high performance.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj June 2000 Pa... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
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| File Size |
70.45K /
7 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BU810_00 BU810
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| OCR Text |
...0
DESCRIPTION The BU810 is a multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM
R = 200
ABS... |
| Description |
MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR
MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR
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| File Size |
47.45K /
4 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BUH615D
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| OCR Text |
...e BUH615D is manufactured using multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in tele... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
49.52K /
4 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BUL89
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| OCR Text |
...manufactured using high voltage multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost swi... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
69.55K /
6 Page |
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it Online |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BUV20
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| OCR Text |
...ESCRIPTION The BUV20 is silicon multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLU... |
| Description |
HIGH CURRENT NPN SILICON TRANSISTOR
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| File Size |
40.64K /
4 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BUV26_03 BUV26
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| OCR Text |
...2
DESCRIPTION The BUV26 is a multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.
TO-220
INTERNAL SCHEMATIC DIAGRAM
AB... |
| Description |
SILICON NPN SWITCHING TRANSISTOR
MEDIUM POWER NPN SILICON TRANSISTOR
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| File Size |
54.27K /
4 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BUV27_03 BUV27
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| OCR Text |
...2
DESCRIPTION The BUV27 is a multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.
TO-220
INTERNAL SCHEMATIC DIAGRAM
AB... |
| Description |
SILICON NPN SWITCHING TRANSISTOR
MEDIUM POWER NPN SILICON TRANSISTOR
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| File Size |
54.12K /
4 Page |
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it Online |
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CP245
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| OCR Text |
...lization Back Side Metalization multiepitaxial MESA 120 x 145 MILS 13 MILS 20 x 45 MILS 14 x 70 MILS Al - 50,000A Cr / Ni / Ag - 10,000A
GEOMETRY GROSS DIE PER 4 INCH WAFER 640 PRINCIPAL DEVICE TYPES MJE15030
145 Adams Avenue Hauppaug... |
| Description |
Power Transistor NPN, 8.0A Power Transistor Chip
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| File Size |
27.50K /
1 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
D44H8_02 D44H11 D44H8 D44H802
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| OCR Text |
...e D44H8, and D44H11 are silicon multiepitaxial Planar NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11.
T... |
| Description |
NPN SILICON POWER TRANSISTORS
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| File Size |
149.54K /
5 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2310
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| OCR Text |
multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings: Collector-Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . .... |
| Description |
Silicon NPN Transistor High Voltage, High Speed Switch
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| File Size |
19.57K /
2 Page |
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it Online |
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Price and Availability
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