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				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF134
OCR Text	..., 2.0 W Carbon Board -- G10, 62 mils DUT C3 L2 C7 C8 L3 R5 R4 + - C10 C9 C11 C12 + VDD = 28 V C4 RF OUTPUT Figure 1. 150 MHz Test Circuit MRF134 2 MOTOROLA RF DEVICE DATA 10 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WA...
Description	N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	205.26K / 10 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF137
OCR Text	...or equivalent C5 -- 680 pF, 100 mils Chip C6 -- 0.01 F, 100 V, Disc Ceramic C7 -- 100 F, 40 V C8 -- 0.1 F, 50 V, Disc Ceramic C9, C10 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener L1 -- 2 Turns, 0.29 ID, #18 AWG Enamel, Closewound L2 -...
Description	N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	196.56K / 10 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC-ALH37609
OCR Text	...ayer) placed no farther than 30 mils from the amplifi er. note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. hmc-alh376 v02.0209 gaas hemt mmic low noise amplifier, 35 - 45 ghz low n...
Description	GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz
File Size	176.40K / 6 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	5962F9961802V9A 5962F9961802VXC 5962F9961802VEC HS0-201HSEH-Q HS0-201HSRH/SAMPLE HS-201HSRH-13 HS1-201HSEH-Q
OCR Text	...e dimensions 2790m x 4950m (110 mils x 195 mils) thickness: 483m 25.4m (19 mils 1 mil) interface materials glassivation type: phosphorus silicon glass (psg) thickness: 8.0k ? 1.0k ? metallization type: ti/alcu thickness: 16.0k ? 2k ? sub...
Description	Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch
File Size	218.53K / 5 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC34709
OCR Text	...ie should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader...
Description	GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz
File Size	213.57K / 6 Page	View it Online	Download Datasheet

				Peregrine Semiconductor Peregrine Semiconductor Cor... Peregrine Semiconductor...
Part No.	PE42422 PE42422-15
OCR Text	...al with a total thickness of 62 mils. the top and bottom rf layers are rogers ro4350 material with a 10 mil rf core. the middle layers provide ground for the transmission lines. the transmission lines were designed using a coplanar wave...
Description	UltraCMOS SPDT RF Switch
File Size	364.30K / 13 Page	View it Online	Download Datasheet

				Peregrine Semiconductor
Part No.	PE42556
OCR Text	...s with a total thickness of 62 mils. the top and bottom layers are rogers ro4003 material with an 8 mil core and er = 3.55. the middle layers provide ground for the transmission lines. the rf transmission lines were designed using a co...
Description	UltraCMOS SPDT RF Switch
File Size	304.87K / 10 Page	View it Online	Download Datasheet

				VISHAY SEMICONDUCTORS
Part No.	SC105H150A5B
OCR Text	mils sc105.....5. series www.irf.com 1 bulletin i0503j rev. c 05/01 note: 10 mils die thickness is available on specific request only. contact factory for information. not to scale 40 (157) ? 125 (492) notes: 1. all dimensions a...
Description	150 V, SILICON, RECTIFIER DIODE
File Size	157.16K / 5 Page	View it Online	Download Datasheet

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