| |
|
 |
IXYS[IXYS Corporation]
|
| Part No. |
IXGR32N60CD1
|
| OCR Text |
...lector, TAB = Collector
G C
isoplus 247TM (IXGR) E 153432
E
Isolated backside*
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = 600V VGE = 0 V VCE = 0 V, VGE = 20 V IC = IT, VGE = 15 V Note 1
(c) 2004 IXYS All... |
| Description |
HiPerFAST IGBT with Diode isoplus247
|
| File Size |
567.82K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXGR35N120C IXGR35N120B
|
| OCR Text |
... V V V V A A A A W C C C C g
isoplus 247 E153432
G
C
E
Isolated Backside*
C = Collector
G = Gate, E = Emitter
* Patent pending
Features
l l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for... |
| Description |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFAST IGBT isoplus247
|
| File Size |
48.12K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXGR40N60CD1 IXGR40N60C
|
| OCR Text |
...00 V V V V A A A A W C C C C
isoplus 247 E153432
G
C
E
Isolated Backside*
G = Gate, E = Emitter
C = Collector
* Patent pending
Features
l l l l l
DCB Isolated mounting tab Meets TO-247AD package Outline High c... |
| Description |
HiPerFAST IGBT isoplus247
|
| File Size |
259.53K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXKR40N60C IXKR40N60
|
| OCR Text |
...0 38 25 6 1.8 1 V V A A V/ns
isoplus 247TM E153432
G
D
Isolated base*
G = Gate
D = Drain
S = Source
* Patent pending
Features
J mJ
q
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwis... |
| Description |
CoolMOS Power MOSFET in isoplus247 Package
|
| File Size |
44.96K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| Part No. |
DSEK60-02 DSEK60-02A DSEK60-02AR EK60-02
|
| OCR Text |
...Type
TO-247 AD
Version A
isoplus 247TM
Version AR
DSEK 60-02A DSEK 60-02AR
A
C
A
A C A C (TAB)
A C A
Isolated back surface *
A = Anode, C = Cathode Symbol IFRMS IFAVM yyx IFRM IFSM Test Conditions TVJ = TVJM ... |
| Description |
Common Cathode Fast Recovery Epitaxial Diode (FRED) 50 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AD
|
| File Size |
55.74K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXTR200N10P
|
| OCR Text |
...mJ J V/ns W C C C V~ Nm/lb g
isoplus 247TM E153432
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
133 75 400 60 10... |
| Description |
PolarTM HiPerFET Power MOSFET
|
| File Size |
108.50K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| Part No. |
L412 IXBF9N140 IXBF9N160
|
| OCR Text |
isoplus i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25C TC = 90C VGE = 15/0 V; RG = 100 W; T... |
| Description |
High Voltage BIMOSFET
High Voltage BIMOSFET 7 A, 1600 V, N-CHANNEL IGBT
High Voltage BIMOSFET 高压BIMOSFET
|
| File Size |
89.88K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
