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  intensive-contact Datasheet PDF File

For intensive-contact Found Datasheets File :: 404    Search Time::2.219ms    
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    Samsung Electronics
Part No. K9F8G08B0M K9F8G08U0M
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F8G08X0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mappingout algorithm. The K9F8G08X0M is an opti...
Description FLASH MEMORY

File Size 1,241.38K  /  54 Page

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    K9K8G08U0A-Y K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P K9WAG08U1A067 K9XXG08UXA06 K9K8G08U0A K9WAG08U1A K9WAG08U1A-I

SAMSUNG[Samsung semiconductor]
Part No. K9K8G08U0A-Y K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P K9WAG08U1A067 K9XXG08UXA06 K9K8G08U0A K9WAG08U1A K9WAG08U1A-I
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9K8G08U0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an opt...
Description 1G X 8 BIT / 2G X 8 BIT / 4G X 8 BIT NAND FLASH MEMORY

File Size 1,072.37K  /  50 Page

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    Samsung Electronics
Part No. K9HBG08U1M K9MCG08U5M K9LAG08U0M
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9LAG08U0Ms extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9LAG08U0M is an optim...
Description Flash Memory

File Size 995.63K  /  45 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00
OCR Text ...in- ing of data. even the write-intensive systems can take advantage of the k9f1gxxx0m s extended reliability of 100k program/erase cycles by providing ecc(error correcting code) with real time mapping-out algorithm. the k9f1gxxx0m is an o...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48

File Size 737.72K  /  40 Page

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    K9F1208B0C-P K9F1208R0C-J K9F1208U0C K9F1208U0C-J K9F1208U0C-P

SAMSUNG[Samsung semiconductor]
Part No. K9F1208B0C-P K9F1208R0C-J K9F1208U0C K9F1208U0C-J K9F1208U0C-P
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F1208X0Cs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0C is an opt...
Description FLASH MEMORY

File Size 682.79K  /  38 Page

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    K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F280

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808U0B-Y K9F2808U0B-YCB0 K9F2808U0B-YIB0 K9F2808Q0C K9F2808Q0C-DCB0
OCR Text ...d margining of data. Even write-intensive systems can take advantage of the K9F2808X0B' extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with s real time mapping-out algorithm. The K9F2808X0B is suit...
Description 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory

File Size 302.44K  /  29 Page

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