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NTE[NTE Electronics]
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| Part No. |
NTE5540 NTE5539
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| OCR Text |
...er Current (VD = 12V, RL = 30), igt Minimum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Maximum . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon Controlled Rectifier (SCR) 55 Amps
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| File Size |
18.61K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5519 NTE5514 NTE5516 NTE5517
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| OCR Text |
...0A Peak Gate-Power Dissipation (igt igtM for 3s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon Controlled Rectifier (SCR)
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| File Size |
17.64K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5513 NTE5511 NTE5512
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| OCR Text |
... Note 1. VFB = vBOO(min value), igt = 200mA, 0.5s rise time Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.
Electrical Characteristics: (At Maximum Ratings, TC = +25C unless oth... |
| Description |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. Silicon Controlled Rectifier (SCR) 5 Amp
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| File Size |
21.88K /
2 Page |
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it Online |
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Price and Availability
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