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For hexfets Found Datasheets File :: 1022    Search Time::1.984ms    
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    IRF7603

International Rectifier
Part No. IRF7603
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description 30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)

File Size 107.39K  /  8 Page

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    IRF7604

International Rectifier
Part No. IRF7604
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=-20V/ Rds(on)=0.09ohm)
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

File Size 130.78K  /  8 Page

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    IRF7606

International Rectifier
Part No. IRF7606
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.09ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.09ohm)

File Size 95.99K  /  8 Page

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    IRFP150N IRFP150

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP150N IRFP150
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)\u003d 0.035W,身份证\u003d 42A条)

File Size 130.84K  /  8 Page

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    IRFP360LC

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP360LC
OCR Text ...n ruggedness and reliability of hexfets offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of ...
Description Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A) 功率MOSFET(减振钢板基本\u003d00V,的Rdson)\u003d 0.20ohm,身份证\u003d 23A条)

File Size 298.23K  /  8 Page

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    IRFR3910 IRFU3910 IRFRU3910

IRF[International Rectifier]
Part No. IRFR3910 IRFU3910 IRFRU3910
OCR Text ...15 ID = 16A Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...
Description RECT SCHOTTKY 60V 5A POWERMITE3
Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

File Size 137.93K  /  10 Page

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    IRF520L IRF520NS

IRF[International Rectifier]
Part No. IRF520L IRF520NS
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

File Size 181.26K  /  10 Page

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    IRF520N

International Rectifier, Corp.
Part No. IRF520N
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET(减振钢板基本\u003d 100伏,的Rds(on)\u003d 0.20欧姆,身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

File Size 113.03K  /  8 Page

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    IRF7341

International Rectifier
Part No. IRF7341
OCR Text ... Top V ie w Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description HEXFET Power MOSFET

File Size 131.32K  /  7 Page

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    IRF7342

IRF[International Rectifier]
Part No. IRF7342
OCR Text ... T op V iew Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET

File Size 133.26K  /  7 Page

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