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  diffused-junction Datasheet PDF File

For diffused-junction Found Datasheets File :: 4967    Search Time::1.531ms    
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    BU2520D

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2520D
OCR Text Diffused Power Transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integ...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 125 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 49.01K  /  6 Page

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    BU2522AF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2522AF
OCR Text Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 45 150 150 UNIT V V...
Description Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 71.65K  /  7 Page

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    BU2522AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2522AW
OCR Text Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 125 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 75.71K  /  7 Page

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    BU2522A BU2522

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2522A BU2522
OCR Text Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic ...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 125 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 51.62K  /  7 Page

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    BU2522DF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2522DF
OCR Text Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 45 150 150 UNIT V V...
Description Silicon Diffused Power Transistor

File Size 78.49K  /  7 Page

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    BU2522DX

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2522DX
OCR Text Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 45 150 150 UNIT V V...
Description Silicon Diffused Power Transistor 10 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 80.60K  /  7 Page

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    BU2522 BU2522AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2522 BU2522AX
OCR Text Diffused Power Transistor BU2522AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 10 25 6 9 150 6 45 150 150 UNIT V V...
Description Silicon Diffused Power Transistor

File Size 73.91K  /  7 Page

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    BU2523AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2523AX
OCR Text Diffused Power Transistor BU2523AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 175 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 66.12K  /  6 Page

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    BU2523DF

PHILIPS[Philips Semiconductors]
Part No. BU2523DF
OCR Text Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an inte...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 175 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 67.71K  /  7 Page

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    BU2523DX

PHILIPS[Philips Semiconductors]
Part No. BU2523DX
OCR Text Diffused Power Transistor BU2523DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an inte...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 175 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 69.89K  /  7 Page

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For diffused-junction Found Datasheets File :: 4967    Search Time::1.531ms    
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