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For compound Found Datasheets File :: 13003    Search Time::1.422ms    
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    MP03XX440 MP03XX440-21 MP03XX440-16 MP03XX440-18 MP03XX440-20

Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. MP03XX440 MP03XX440-21 MP03XX440-16 MP03XX440-18 MP03XX440-20
OCR Text ...ting torque = 5Nm with mounting compound Conditions Max. 0.12 0.13 0.14 0.05 150 -40 to 150 2.5 Units o C/W o C/W C/W C/W o o o C C o kV CHARACTERISTICS Symbol VFM IRM VTO rT Parameter Forward voltage Peak reve...
Description Dual Diode Modules 双二极管模块

File Size 101.08K  /  10 Page

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    MP03XXX130 MP03_130-16 MP03_130-18 MP03_130-20 MP03/130-16 MP03/130-18 MP03/130-20 MP03HBT130-20

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Part No. MP03XXX130 MP03_130-16 MP03_130-18 MP03_130-20 MP03/130-16 MP03/130-18 MP03/130-20 MP03HBT130-20
OCR Text ...ting torque = 5Nm with mounting compound Conditions Max. 0.21 0.22 0.23 0.05 125 -40 to 125 2.5 Units o C/W C/W C/W C/W o o o o C C o kV DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt Parameter On-state voltag...
Description 210 A, 2000 V, SCR
MB 31C 31#16 SKT RECP
MB 31C 31#16 PIN RECP
MB 19C 19#12 SKT RECP
Phase Control Dual SCR, SCR/Diode Modules

File Size 111.83K  /  10 Page

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    MP03XXX175 MP03_175-10 MP03_175-12 MP03_175-14 MP03_175-16 MP03/175-12 MP03/175-10 MP03/175-14 MP03/175-16

DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. MP03XXX175 MP03_175-10 MP03_175-12 MP03_175-14 MP03_175-16 MP03/175-12 MP03/175-10 MP03/175-14 MP03/175-16
OCR Text ...ting torque = 5Nm with mounting compound Conditions Max. 0.21 0.22 0.23 0.05 125 -40 to 125 2.5 Units o C/W C/W C/W C/W o o o o C C o kV DYNAMIC CHARACTERISTICS - THYRISTOR Symbol VTM IRRM/IDRM dV/dt dI/dt VT(TO) ...
Description    Phase Control Dual SCR, SCR/Diode Modules
MB 61C 61#20 PIN RECP
MB 31C 31#16 SKT RECP

File Size 112.76K  /  10 Page

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    Vishay
Part No. CP0003 CP0005 CP0007 CP0007XXX3 CP0010XXX3 CP0005XXX3
OCR Text ...nding) ? special cement potting compound and ceramic case provide high the rmal conductivity in a fireproof package ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 standard electrical specific...
Description Wirewound/Metal Oxide Resistors

File Size 104.25K  /  3 Page

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    SMC
Part No. ZSE40F
OCR Text ...40 01 ise40 01 22 22 for vacuum/compound pressure for positive pressure 10.0 to ?01.3 kpa ?00.0 to 100.0 kpa set pressure range nil f ?.100 to 1.000 mpa f or positive pressure set pressure range nil unit specifications nil m with unit switc...
Description Pressure Sensors

File Size 579.00K  /  8 Page

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    DIODES[Diodes Incorporated]
Part No. MMSTA92_1 MMSTA92 MMSTA92-7-F MMSTA921
OCR Text ...Molded Plastic, "Green" Molding compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating...
Description PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

File Size 68.17K  /  4 Page

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    DYNEX[Dynex Semiconductor]
Part No. MP03XX260 MP03_260-10 MP03_260-12 MP03_260-14 MP03_260-16 MP03/260-10 MP03/260-12 MP03/260-14 MP03/260-16
OCR Text ...ting torque = 5Nm with mounting compound Conditions Max. 0.21 0.22 0.23 0.05 150 -40 to 150 2.5 Units o C/W C/W C/W o o o C/W o C C o kV CHARACTERISTICS Symbol VFM IRM VTO rT Parameter Forward voltage Peak reve...
Description Dual Diode Modules

File Size 93.71K  /  9 Page

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    BGF1801-10

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BGF1801-10
OCR Text ...l behaviour, the use of thermal compound is recommended when mounting the module onto the amplifier external heatsink. The following recommended thermal compounds have a thermal conductivity of >0.5 W/mK: * WPS II (silicone-free) from Auste...
Description GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

File Size 89.63K  /  11 Page

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    Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
Part No. MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190-10
OCR Text ...ting torque = 5Nm with mounting compound Conditions Max. 0.21 0.22 0.23 0.05 125 -40 to 125 2.5 Units o C/W C/W C/W C/W o o o o C C o kV DYNAMIC CHARACTERISTICS Symbol VTM IRRM/IDRM dV/dt dI/dt VT(TO) rT Parameter...
Description Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅,SCR /二极管模

File Size 107.46K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. MP03XXX275-22 MP03XXX275 MP03XXX275-16 MP03XXX275-18 MP03XXX275-20
OCR Text ...ting torque = 5Nm with mounting compound Off-state (Blocking) 0.12 0.13 0.14 0.05 125 -40 to 125 2.5 C/W o C/W C/W C/W o o o C o C kV DYNAMIC CHARACTERISTICS- THYRISTOR Symbol Parameter Conditions Max. Uni...
Description Phase Control Dual SCR, SCR/Diode Modules

File Size 111.65K  /  10 Page

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For compound Found Datasheets File :: 13003    Search Time::1.422ms    
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