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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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Part No. |
SM25JZ51 SM25GZ51
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Description |
BI .DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE TOSHIBA bi-directional TRIODE THYRISTOR ILICON PLANAR TYPE TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE
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File Size |
187.07K /
5 Page |
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Continental Device India Limited
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Part No. |
BD535K BD536J BD534K BD538K BD538J BD534 BD537
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Description |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. 50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. ; Package/Case:3-TO-220; Current, It av:16A; Gate trigger Current Max, Igt:20mA ; Package/Case:3-TO-218X; Current, It av:25A; Gate trigger Current Max, Igt:80mA Triac; Triac Type:Internally triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate trigger Current Max, Igt:1.5A ; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate trigger Current (QI), Igt:10mA; Current, It av:6A; Gate trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
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File Size |
24.98K /
3 Page |
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Download Datasheet
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Price and Availability
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