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Micron
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| Part No. |
MT9V032C12STC
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| OCR Text |
...ctive imager size 4.51mm(h) x 2.88mm(v) 5.35mm diagonal active pixels 752h x 480v pixel size 6. 0m x 6.0m color filter array monochrome or color rgb bayer pattern shutter type global shutter?truesnap ? maximum data rate/ master clock 26.6... |
| Description |
1/3-Inch Wide-VGA CMOS Digital Image Sensor
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| File Size |
250.61K /
13 Page |
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Download Datasheet
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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...y flat length 0.625" 0.065" 15.88mm 1.65mm secondary flat length 0.315" 0.065" 8.0mm 1.65mm cleaved flat length (laser substrate only) nominal 0.4" (10mm) surface orientation 6h and 4h on-axis {0001} 0.5 6h off-axis 3.5 toward <112... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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it Online |
Download Datasheet |
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Price and Availability
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