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Vishay Semiconductors
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Part No. |
BYS11-90-E3/TR
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OCR Text |
...nt vs. ambient temperature 0 40 80 120 160 200 2.0 1.6 1.2 0.8 0.4 0 v r = v rrm , half sine-wave, r thja = 25 k/w ambient temperature (c)...90 vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. max. a... |
Description |
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File Size |
89.46K /
4 Page |
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WEARNES CAMBION LTD
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Part No. |
550-5620-90-1J-36
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OCR Text |
...00 22 125.0 500 310.0 11-3 * 10.80 20 125.0 500 340.0 14-3 * 13.50 20 125.0 500 360.0 16-3 * 16.20 20 125.0 500 375.0 20-3 * 19.80 20 125.0 500 462.0 24-3 23.80 20 125.0 375 510.0 other electrical specifications to order - consult factory ... |
Description |
1 ELEMENT, 900 uH, GENERAL PURPOSE INDUCTOR
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File Size |
23.20K /
2 Page |
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Shenzhen Taychipst Electronic Co., Ltd
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Part No. |
BYS11-90
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OCR Text |
...st.com 0 40 80 120 160 0 0.4 0.8 1.2 1.6 2.0 200 95 9715 p maximum reverse power dissipation ( w ) r t j junction t...90 schottky barrier rectifier
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Description |
Schottky Barrier Rectifier
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File Size |
2,081.53K /
2 Page |
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Philips
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Part No. |
BLF0810S-90 BLF0810-90 BLF0810-90_S_N_1
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OCR Text |
...
4
10
0 0 20 40 60
0 80 100 PL (PEP) (W)
-80 0 20 40 60 80 100 PL (PEP) (W)
VDS = 27 V; IDQ = 500 mA; f1 = 881.4 MHz; f2 = ...90; BLF0810S-90
0 d5 (dBc) -20
0 d7 (dBc) -20
IDQ=600mA
-40
400mA 450mA 500mA
-40
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Description |
Base station LDMOS transistors From old datasheet system
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File Size |
140.94K /
13 Page |
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it Online |
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