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600v 8a Datasheet PDF File

For 600v 8a Found Datasheets File :: 1182 Search Time::1.265ms
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				Fairchild Semiconductor
Part No.	FFPF08S60SN FFPF08S60SNTU
OCR Text	...EALTHTM II Rectifier tm 8a, 600v STEALTHTM II Rectifier The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended...
Description	8a, 600v STEALTHTM II Rectifier
File Size	150.22K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	FFP08S60SN FFP08S60SNTU
OCR Text	...EALTHTM II Rectifier tm 8a, 600v STEALTHTM II Rectifier The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended ...
Description	8a, 600v STEALTH II Rectifier; Package: TT220; No of Pins: 2; Container: Rail 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8a, 600v STEALTHTM II Rectifier
File Size	277.98K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FCA16N6006 FCA16N60_F109 FCA16N60 FCA16N60-06 FCA16N60-F109
OCR Text	600v N-Channel MOSFET SuperFET FCA16N60 600v N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge (...8a VDS = 40V, ID = 8a VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(No...
Description	600v N-Channel MOSFET
File Size	859.95K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FFP08S60S07 FFP08S60STU
OCR Text	... TM II Rectifier tm 8a, 600v STEALTHTM II Rectifier The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended f...
Description	8a, 600v STEALTHTM II Rectifier
File Size	135.61K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040-S4650 IHP10T120
OCR Text	... V G E = 1 5V,t S C 10s V C C = 600v, T j = 25 C 48 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 10A V ...8a IC=5A IC=2.5A 10A 5A TJ=150C 25C 0A 0V 2V 4V 6V 8V 10V 12V 0C 50C 100C VGE, GAT...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	331.26K / 14 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOI11S60
OCR Text	600v 11a a aa a mos tm power transistor v ds @ t j,max 700v i dm 45a r ds(on),max 0.399 w q g,typ 11nc e oss @ 400v 2.7 m...8a, t j =25c v ds =480v, t j =150c zero gate voltage drain current body diode reverse recovery charg...
Description	600v 11A a MOS TM Power Transistor
File Size	641.09K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	RURD860S RURD840 RURD840S RURD860
OCR Text	600v Ultrafast Diodes The RURD840, RURD860, RURD840S and RURD860S are ultrafast dual diodes with soft recovery characteristics (trr < 60ns)...8a IF = 8a, TC = 150oC IR VR = 400V VR = 600v VR = 400V, TC = 150oC VR = 600v, TC = 150oC trr IF = 1...
Description	8a, 400V - 600v Ultrafast Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-251
File Size	49.01K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	ILA03N60 Q67040-S4625 ILB03N60 Q67040-S4626 Q67040-S4627 Q67040-S4628 ILP03N60 ILD03N60
OCR Text	...aximum Ratings Parameter VCE 600v 600v 600v 600v IC 3.0A 3.0A 3.0A 3.0A VCE(sat),Tj=25C 2.9V 2.9V 2.9V 2.9V Tj,max 150C 150C 150...8a T j = 25 C T j = 15 0 C Diode forward voltage VF V G E = 0V, I F = 3. 0A T j = 25 C T j = 15 0 C ...
Description	3A / 600v IGBT with monolithically integrated diode for resonant-halfbridge topologies in lighting ballast (40W-120W) From old datasheet system High Speed CMOS Logic Hex Non-Inverting Buffers 16-SO -55 to 125 LightMOS功率晶体 LightMOS Power Transistor LightMOS功率晶体
File Size	327.69K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGW08T120
OCR Text	...v ge =15v, t sc 10 s v cc = 600v, t j = 25 c - 48 - a 1) allowed number of short circuits: <1000; time between short circuits:...8a, v ge =-15/15v, r g =81 ? , l 2) =180nh, c 2) =39pf energy losses include ?tail? and dio...
Description	Low Loss IGBT in TrenchStop and Fieldstop technology
File Size	346.01K / 12 Page	View it Online	Download Datasheet

For 600v 8a Found Datasheets File :: 1182 Search Time::1.265ms
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