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SEMIWELL[SemiWell Semiconductor]
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Part No. |
SFP630
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OCR Text |
...ring purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
200 9 5.7 36
Units
V A A A V mJ m...9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C ... |
Description |
N-Channel MOSFET
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File Size |
799.90K /
7 Page |
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SAMHOP[SamHop Microelectronics Corp.]
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Part No. |
SDM4952
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OCR Text |
... AT UR E S
( m W ) MAX
ID
-5.3A
R DS (ON)
S uper high dense cell design for low R DS (ON).
50 @ V G S = -4.5V 75 @ V G S = -2....9A VGS =-2.7V, ID = -1.5A VDS = -5V, VGS = -4.5V VDS = -15V, ID = - 4.9A
Min Typ C Max Unit
-20 ... |
Description |
Dual P -Channel E nhancement Mode F ield E ffect Transistor
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File Size |
290.39K /
5 Page |
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it Online |
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TY Semiconductor Co., Ltd
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Part No. |
KI7540DP
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OCR Text |
...= 150 )* t a =25 11.8 7.6 -8.9 -5.7 a t a =70 9.5 6.1 -7.1 -4.6 a pulsed drain current i dm a continuous source current (diode conduction)* ...9a p-ch 0.026 0.032 v gs =2.5v,i d = 9.8a n-ch 0.020 0.025 v gs =-2.5v,i d = -6.9a p-ch 0.043 0.053 ... |
Description |
TrenchFET Power MOSFET PWM Optimized for High Efficiency
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File Size |
326.25K /
2 Page |
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it Online |
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Price and Availability
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