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  2m x 8 burst edo dram Datasheet PDF File

For 2m x 8 burst edo dram Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 K7A203600B-QC14 DSK6X8016C3B K6X8016C3B DS_K6X8016C3B K7A203200B-QC_I1

Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 K7A203600B-QC14 DSK6x8016C3B K6x8016C3B DS_K6x8016C3B K7A203200B-QC_I14 K7A203600B-QC_I14
Description 64Kx36 & 64Kx32-Bit Synchronous Pipelined burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined burst SRAM
64Kx36-Bit Synchronous Pipelined burst SRAM

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Cypress Semiconductor, Corp.
Part No. CY7C1515KV18-250BZxI CY7C1515KV18-300BZC CY7C1515KV18-250BZI CY7C1515KV18-250BZC CY7C1515KV18-250BZxC CY7C1513KV18-300BZC CY7C1513KV18-300BZxC CY7C1513KV18-250BZxI CY7C1526KV18-300BZxC
Description 72-Mbit QDR II SRAM 4-Word burst Architecture
72-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M x 18 QDR SRAM, 0.45 ns, PBGA165

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K7A803600A-16 K7A801800A K7A801800A-10 K7A801800A-14 K7A801800A-15 K7A801800A-16 K7A803600A K7A803600A-10 K7A803600A-14 K7A803600A-15
Description 512Kx18-Bit Synchronous burst SRAM Data Sheet
256Kx36Bit Synchronous burst SRAM Data Sheet
256Kx36 & 512Kx18-Bit Synchronous Pipelined burst SRAM

File Size 533.17K  /  20 Page

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Integrated Device Technology, Inc.
Part No. IDT71V2576S IDT71V2578S IDT71V2578YS150BG IDT71V2578YS150BGI IDT71V2578YS150BQ IDT71V2576YSA133BQ IDT71V2576YSA133PFI IDT71V2576YSA150BQI IDT71V2576YSA133BQI IDT71V2576YSA150BG IDT71V2576YSA150PFI IDT71V2576YS150BGI IDT71V2576YS133BGI IDT71V2578SA150PFI IDT71V2576YS133PFI IDT71V2578YS150PFI IDT71V2578YS133PFI IDT71V2576YS150PF IDT71V2576YS150PFI IDT71V2576YS150BQI IDT71V2576YS133BQ IDT71V2578YSA133BQI IDT71V2578YSA150BG IDT71V2578YSA133PFI IDT71V2576YS133BQI IDT71V2578SA133BGI IDT71V2578S150PFI IDT71V2578YS133BGI IDT71V2578YS133BQI IDT71V2576SA133PF IDT71V2576SA133BGI IDT71V2576YS133BG IDT71V2578YS133BQ IDT71V2578YS133PF
Description 128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 256K x 18 CACHE SRAM, 4.2 ns, PBGA119
IC LOGIC 3253 LOW-VOLTAGE DUAL 1-OF-4 FET MULTIPLExER/DEMULTIPLExER -40 85C TSSOP-16 96/TUBE 256K x 18 CACHE SRAM, 4.2 ns, PBGA119
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/REEL-13 128K x 36 CACHE SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出,脉冲计数器,单周期取消
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 256K x 18 CACHE SRAM, 3.8 ns, PBGA119
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 256K x 18 CACHE SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 128K x 36 CACHE SRAM, 4.2 ns, PBGA119
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 128K x 36 CACHE SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 128K x 36 CACHE SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 128K x 36 CACHE SRAM, 3.8 ns, PBGA119
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 128K x 36 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 256K x 18 CACHE SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 256K x 18 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, burst Counter, Single Cycle Deselect 128K x 36 CACHE SRAM, 4.2 ns, PQFP100
IC LOGIC 3257 LOW-VOLTAGE 4-BIT 1-OF-2 FET MULTIPLExER/DEMULTIPLExER -40 85C QSOP-16 97/TUBE

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    Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HYM64V1005GU-50 Q67100-Q2179 HM641005 Q67100-Q2176 Q67100-Q2177 Q67100-Q2178 HYM64V1005GU-5
Description 1M x 72 Bit ECC dram Module unbuffered
1M x 64 Bit dram Module unbuffered
From old datasheet system
3.3V 1M x 64-Bit edo-dram Module 3.3V 1M x 72-Bit edo-dram Module 1M x 72 edo dram MODULE, 60 ns, DMA168
3.3V 1M x 64-Bit edo-dram Module 3.3V 1M x 72-Bit edo-dram Module 1M x 64 edo dram MODULE, 60 ns, DMA168

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Part No. WED2ZL361MS50BC WED2ZL361MS35BC WED2ZL361MS38BC WED2ZL361MS42BC
Description 1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间
1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间
1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间
1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间

File Size 213.03K  /  12 Page

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Part No. WED2DL36513AV40 WED2DL36513V40 WED2DL36513AV35BC WED2DL36513AV25
Description 512Kx36 Synchronous Pipeline burst SRAM(高速低功耗CMOS.0ns,512Kx36 同步流水线脉冲静态RAM) 512Kx36同步管道爆裂的SRAM(高速低功耗的CMOS.0ns12Kx36同步流水线脉冲静态内存)
512Kx36 Synchronous Pipeline burst SRAM(楂??浣????MOS锛?.0ns,512Kx36 ???娴?按绾胯??查???AM)
512K x 36 STANDARD SRAM, 3.5 ns, PBGA119
512Kx36 Synchronous Pipeline burst SRAM(楂??浣????MOS锛?.5ns,512Kx36 ???娴?按绾胯??查???AM)

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    Alliance Semiconductor Corp...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
Part No. AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C33128PFD32B AS7C33128PFD32B-133TQC AS7C33128PFD32B-133TQCN AS7C33128PFD32B-133TQI AS7C33128PFD32B-133TQIN AS7C33128PFD32B-166TQC AS7C33128PFD32B-166TQCN AS7C33128PFD32B-166TQI AS7C33128PFD32B-166TQIN AS7C33128PFD32B-200TQC AS7C33128PFD32B-200TQCN AS7C33128PFD32B-200TQI AS7C33128PFD32B-200TQIN AS7C33128PFD36B-133TQC AS7C33128PFD36B-133TQCN AS7C33128PFD36B-133TQI AS7C33128PFD36B-133TQIN AS7C33128PFD36B-166TQC AS7C33128PFD36B-166TQCN AS7C33128PFD36B-166TQI AS7C33128PFD36B-166TQIN AS7C33128PFD36B-200TQC AS7C33128PFD36B-200TQCN AS7C33128PFD36B-200TQI
Description Sync SRAM - 3.3V
LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 32 STANDARD SRAM, 4 ns, PQFP100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 36 STANDARD SRAM, 4 ns, PQFP100
128K x 36 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, TQFP-100
128K x 32 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, TQFP-100
128K x 32 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, LEAD FREE, TQFP-100
128K x 36 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, LEAD FREE, TQFP-100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 32 STANDARD SRAM, 3 ns, PQFP100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 32 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 3.3 128K的x 32/36管道爆裂同步SRAM

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SIEMENS AG
Part No. HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJL-60 HYB314175BJL-55 Q67100-Q2149 HYB314175BJ-50
Description High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的dram 3.3V56亩16位江户与dram的低功率版本自刷
3.3V 256 K x 16-Bit edo-dram 3.3V 256 K x 16-Bit edo-dram Low power version with Self Refresh
3.3V 256 K x 16-Bit edo-dram(3.3V 256K×16外延式数据输出(edo)动态RAM)

File Size 1,310.29K  /  24 Page

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    HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 HYB3165805AT-60 HYB3165805AT-50 HYB3165805AT-40 HYB3165805AJ-60 HYB31

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 HYB3165805AT-60 HYB3165805AT-50 HYB3165805AT-40 HYB3165805AJ-60 HYB3165805AJ-50 HYB3165805AJ-40 HYB3164805ATL-60 HYB3164805ATL-50 HYB3164805ATL-40 HYB3164805AT-60 HYB3164805AT-50 HYB3164805AT-40 HYB3164805AJ-60 HYB3164805AJ-50 HYB3164805AJ-40 HYB3164805AJ HB64805A
Description 4M x 16 Bit 4k edo dram Low Power
8M x 8 Bit 4k edo dram
8M x 8 Bit 8k edo dram
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, edo-Version)
From old datasheet system

File Size 327.52K  /  29 Page

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