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BRILLIANCE SEMICONDUCTOR, Inc. BSI[Brilliance Semiconductor]
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Part No. |
BS616UV8020BI BS616UV8020 BS616UV8020BC
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OCR Text |
... Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed a... |
Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
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File Size |
204.80K /
11 Page |
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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Part No. |
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
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OCR Text |
... Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed a... |
Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
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File Size |
212.98K /
12 Page |
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Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
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Part No. |
C7041 C7040
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OCR Text |
...ctive area [mm (H) x mm (V)] 12.288 x 1.392 12.288 x 2.928 12.288 x 6.000 12.288 x 6.000 24.576 x 1.392 24.576 x 2.928 24.576 x 6.000 24.576 x 6.000 12.288 x 1.392 12.288 x 2.928 12.288 x 6.000 12.288 x 6.000 24.576 x 1.392 24.576 x 2.928 2... |
Description |
CCD multichannel detector head
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File Size |
205.06K /
6 Page |
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Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
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Part No. |
C7181 C7180
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OCR Text |
...ctive area [mm (H) x mm (V)] 12.288 x 12.288 12.288 x 12.288
Note) Multichannel detector head C7182 designed for 512 x 512 pixel, two-stage TE-cooled CCD area image sensor (S7172-0909) is also available. *1: In normal CCD image sensors t... |
Description |
CCD multichannel detector head
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File Size |
66.94K /
2 Page |
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LAPIS SEMICONDUCTOR CO LTD
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Part No. |
MSM56V16160D-12TS-K
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OCR Text |
...56v16160d/dh is a 2-bank 524,288-word 16-bit synchronous dynamic ram, fabricated in oki's cmos silicon-gate process technology. the device operates at 3.3 v. the inputs and outputs are lvttl compatible. features ? silicon gate, quadru... |
Description |
1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
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File Size |
376.49K /
31 Page |
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FUJITSU[Fujitsu Media Devices Limited]
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Part No. |
CS91
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OCR Text |
...ry capacity 32 to 128 K 2176 to 288 K Word range 16 to 1 K 1088 to 8 K Bit range 2 to 128 2 to 36 Unit bit bit
2. Clock synchronous dual-port RAM (2 addresses : 2 RW)
Column type 4 16 Memory capacity 32 to 288 K 128 to 288 K Word range ... |
Description |
Standard cell array
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File Size |
41.62K /
9 Page |
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Price and Availability
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