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				QIMONDA AG
Part No.	HYS64D32000EDL-6-D
OCR Text	...5-d pc3200s?3033?1?c1 o ne rank 256mb so-dimm 512 mbit ( 16) hys64d64020edl-5-d pc3200s?3033?1?a1 two ranks 512mb so-dimm 512 mbit ( 16) pc2700 (cl=2.5) hys64d32000edl-6-d pc2700s?2533-1?c1 o ne rank 256mb so-dimm 512 mbit ( 16) hys64d64...
Description	32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
File Size	706.19K / 29 Page	View it Online	Download Datasheet

				SPANSION
Part No.	S71PL254
OCR Text	...sh memory die pSRAM or SRAM The 256Mb Flash memory consists of two S29PL127J devices. In this case, CE#f2 is used to access the second Flash and no extra address lines are required. The products covered by this document are listed in the ta...
Description	STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
File Size	2,321.50K / 196 Page	View it Online	Download Datasheet

				White Electronic Designs Corporation
Part No.	WEDPN4M64V-B100BC WEDPN4M64V-B100BM WEDPN4M64V-100BC WEDPN4M64V-100BI WEDPN4M64V-100BM WEDPN4M64V-125BC WEDPN4M64V-125BI WEDPN4M64V-125BM WEDPN4M64V-133BC WEDPN4M64V-133BI WEDPN4M64V-XBX WEDPN4M64V-133BM
OCR Text	...NERAL DESCRIPTION The 32MByte (256Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip...
Description	4MX64 SYNCHRONOUS DRAM
File Size	259.25K / 12 Page	View it Online	Download Datasheet

				White Electronic Designs Corporation
Part No.	WEDPN4M72V-B100B2C WEDPN4M72V-B100B2I WEDPN4M72V-100B2C WEDPN4M72V-100B2I WEDPN4M72V-100B2M WEDPN4M72V-125B2C WEDPN4M72V-125B2I WEDPN4M72V-XB2X WEDPN4M72V-133B2C WEDPN4M72V-133B2M WEDPN4M72V-125B2M WEDPN4M72V-133B2I
OCR Text	...NERAL DESCRIPTION The 32MByte (256Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip...
Description	4MX72 SYNCHRONOUS DRAM
File Size	273.18K / 15 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H560838D-NC_LA0 K4H560838D-NC_LA2 K4H560838D-NC_LB0 K4H560838D-NC_LB3 K4H560438D-NC_LB3 K4H560438D-NC K4H560438D-NC_LA0 K4H560438D-NC_LA2 K4H560438D-NC_LB0 K4H560438D-NC/LA0 K4H560438D-NC/LA2 K4H560438D-NC/LB0 K4H560438D-NC/LB3 K4H560838D-NC/LA0 K4H560838D-NC/LA2 K4H560838D-NC/LB0 K4H560838D-NC/LB3
OCR Text	256Mb sTSOPII DDR SDRAM Key Features * Double-data-rate architecture; two data transfers per clock cycle * Bidirectional data strobe(DQS) * Four banks operation * Differential clock inputs(CK and CK) * DLL aligns DQ and DQS transitio...
Description	256MB STSOPII
File Size	89.94K / 18 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4H560838D-TCC4 K4H560838D-TCCC K4H561638D-TCCC K4H56038D-TC K4H561638D-TCC4
OCR Text	256Mb D-die (x8, x16) DDR SDRAM 256Mb D-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 Feb. 2003 DDR SDRAM 256Mb D-die (x8, x16) 256Mb D-die Revision History Revison 0.0 (June. 2002) 1. First release Revison 0.1 (Aug. 20...
Description	256Mb D-die DDR400 SDRAM Specification 256Mb芯片支持DDR400内存规格
File Size	166.12K / 18 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-TC/LA2 K4H560438E-TC/LAA K4H560838E K4H560438E-TLAA K4H560838E-TCAA K4H560838E-TLAA K4H560438E-TCAA K4H560438E-TCB3 K4H560438E-TLB3
OCR Text	256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die DDR SDRAM Specification 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CON...
Description	DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
File Size	216.51K / 24 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
OCR Text	256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHA...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	245.98K / 24 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	NT5SV16M16AT NT5SV16M16AT-7K NT5SV16M16AT-7KL NT5SV16M16AT-8B NT5SV64M4AT-75B NT5SV64M4AT-7K NT5SV32M8AT NT5SV32M8AT-75B NT5SV32M8AT-7K NT5SV32M8AT-8B NT5SV64M4AT-8B NT5SV16M16AT-75B NT5SV16M16AT-75BL NT5SV16M16AT-8BL NT5SV64M4AT
OCR Text	256Mb Synchronous DRAM Features * High Performance: -7K 3 CL=2 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time 1 133 7.5 -- 5.4 -75B, CL=3 133 7.5 -- 5.4 -8B, CL=2 100 10 -- 6 Units MHz ns ns ns Clock Access Time 2 1. ...
Description	256MB SYNCHRONOUS DRAM
File Size	816.51K / 65 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520GR-7-B HYS72D128520GR-7F-B HYS72D128520GR-8-B HYS72D128521GR-7F-B HYS72D128521GR-8-B HYS72D32500GR-7-B HYS72D32500GR-7F-B HYS72D32500GR-8-B HYS72D64500GR-7-B HYS72D64500GR-7F-B HYS72D322500GR-7-B HYS72D128500GR-7-A
OCR Text	256MB, 512MB & 1GByte PC1600 & PC2100 Preliminary Datasheet Revision 0.91 * 184-pin Registered 8-Byte Dual-In-Line DDR-I SDRAM Module for "1U" PC, Workstation and Server main memory applications * One bank 32M x 72, 64M x 72 and two bank 1...
Description	DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 256 MB 32M x 72 PC2100 Registered DIM... DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank Registered DDR SDRAM-Modules Low Profile Registered DDR-I SDRAM-Modules
File Size	257.32K / 22 Page	View it Online	Download Datasheet

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