211.0 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : AD7520SD DS1682 5962F9 CS400F8 2SC3943 HY5DU56 22000 TDA3629T
	Product Description
	Full Text Search

211.0 Datasheet PDF File

For 211.0 Found Datasheets File :: 1651 Search Time::1.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				http:// INFINEON[Infineon Technologies AG]
Part No.	PTF211802A PTF211802E PTF211802
OCR Text	2110-2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and ...
Description	LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
File Size	165.14K / 8 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	AFT21S232SR3 AFT21S230SR3
OCR Text	...covering the frequency range of 2110 to 2170 mhz. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 1500 ma, p out = 50 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output ...
Description	RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	561.02K / 15 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI3442BDV09 SI3442BDV-T1-GE3
OCR Text	2110-rev. e, 12-oct-09 www.vishay.com 1 n-channel 2.5-v (g-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec product summary v ds (v) r ds(on)...
Description	N-Channel 2.5-V (G-S) MOSFET 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	179.60K / 9 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	ECE-V1HA101UP RF3933TR7 EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72A104KA01L ATC800A330JT ATC800A2R7BT ATC800A0R5BT ATC800A1R0BT ATC800A1R5BT ATC800A1R8BT GRM55ER72A475KA01L RF3933-12 RF3933SR RF3933PCK-411 RF3933S2 RF3933SB RF3933SQ
OCR Text	... -6 5 6 7 8 9 10 11 12 13 14 15 2110 2120 2130 2140 2150 2160 2170 2180 input return loss (db) gain (db) frequency (mhz) gain/irl vs. frequency, pout = 49.5dbm (cw, vd = 48v, idq = 300ma) gain irl fixed tuned test circuit 50 52 54 56 58 60 ...
Description	90W GaN WIDE-BAND POWER AMPLIFIER
File Size	1,917.58K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1
OCR Text	...cy g ps (db) pae (%) acpr (dbc) 2110 mhz 31.2 17.0 --48.3 2140 mhz 31.1 16.8 --49.3 2170 mhz 31.1 16.8 --50.1 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, 63 watts cw output power (3 db input overdrive from rated p out ) ? typical p...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	704.90K / 22 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF210451E PTF210451F PTFA210451E
OCR Text	2110 - 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS (R) FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging...
Description	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 MHz and 2110 ?2170 MHz
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B7649
OCR Text	...1730.0 ... 1790.0 mhz 30 43 db 2110.0 ... 2155.0 mhz 43 47 db 2155.0 ... 2170.0 mhz 45 50 db 2400.0 ... 2500.0 mhz 25 32 db 2500.0 ... 3840.0 mhz 20 26 db 3840.0 ... 3960.0 mhz 25 41 db 5760.0 ... 6000.0 mhz 10 20 db 4 october 12, ...
Description	SAW Components
File Size	112.62K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc MOTOROLA
Part No.	MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1
OCR Text	...GNR1) Test Circuit Schematic -- 2110 - 2170 MHz Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values -- 2110 - 2170 MHz Part C1 C2, C6 C3, C7, C8 C4, C5, C9, C10 C11 R1 R2 R3 Description 100 nF Chip Capacitor (120...
Description	RF Power Field Effect Transistors The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications
File Size	572.02K / 24 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLD6G22L-50 BLD6G22LS-50
OCR Text	2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 02 -- 18 March 2010 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP...
Description	W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
File Size	174.80K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF211301 PTF211301A
OCR Text	2110-2170 MHz Description The PTF211301 is a 130-W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures ex...
Description	LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
File Size	444.92K / 9 Page	View it Online	Download Datasheet

For 211.0 Found Datasheets File :: 1651 Search Time::1.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |