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21-state Datasheet PDF File

For 21-state Found Datasheets File :: 67253 Search Time::1.453ms
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				International Rectifier Seme LAB
Part No.	IRF140SMD
OCR Text	... 22A 30 2.4 12 59 12 30.7 21 145 64 105 22 88 nC nC VDS = 0.5BVDSS VDD = 50V ID = 22A RG = 9.1W ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 A V ns Diode Forward Voltage R...
Description	N-CHANNEL POWER MOSFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...rature, for 10 seconds Max. 21 15 84 3.8 94 0.63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/...state)** Typ. --- --- Max. 1.6 40 Units C/W 11/7/97 IRF3315S/L Electrical Charact...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	...0 --- --- --- --- Typ. --- 0.21 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID =...state)* Typ. --- --- Max. 0.75 40 Units C/W Diode Characteristics IS ISM VSD trr...
Description	Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	....063" from Case for 10 Sec. 500 21 84 20 300 2.4 -55 to 150 300 V A A V W W/C C STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise s...State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 1mA VDS =...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...pacitance Min. -55 --- --- -2.0 21 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.05 --- --- --- --- --- --- --- --- --- --- 18 99 61 96 7.5 3400 1400 640 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Ref...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...V 44 ID = 9.0A 6.2 nC VDS = 80V 21 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 9.0A ns --- RG = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 640 --- VGS = 0V 160 --- pF VDS = 25V 88 --- = 1.0MHz...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	... - 0.83 30 oC/W oC/W 5-21 IRF9150 Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Inte...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	...100 800 350 125 14.7 1 2 30 7.1 21 60 140 140 140 -9.3 -37 -4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS mA nA pF nC nC ...
Description	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	... DRAIN GATE DRAIN (FLANGE) 4-21 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures...State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) F...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...L 1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) FE E D D IR E C TIO N 1 3.5 0 (. 532 ) 1 2.8 0 (. 504 ) 2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 4 33 ...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

For 21-state Found Datasheets File :: 67253 Search Time::1.453ms
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