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  200ma-ifm Datasheet PDF File

For 200ma-ifm Found Datasheets File :: 193    Search Time::3.906ms    
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    1SS33607 1SS336

Toshiba Semiconductor
Part No. 1SS33607 1SS336
OCR Text ...ition IF = 10mA IF = 100mA IF = 200mA VR = 30V VR = 80V VR = 0, f = 1MHz IF = 30mA, Fig.1 Min Typ. 0.64 0.78 0.84 7 7 Max 1.2 0.25 0.50 20 A pF ns V Unit 1 2007-11-01 1SS336 Fig.1 Reverse Recovery Time (trr) Test Circu...
Description Ultra High Speed Switching Application

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    1SS33707 1SS337

Toshiba Semiconductor
Part No. 1SS33707 1SS337
OCR Text ...ition IF = 10mA IF = 100mA IF = 200mA VR = 30V VR = 80V VR = 0, f = 1MHz IF = 30mA, Fig.1 Min Typ. 0.66 0.80 0.88 1.6 6 Max 1.20 0.25 0.50 20 A pF ns V Unit 1 2007-11-01 1SS337 Fig.1 Reverse Recovery Time (trr) Test Ci...
Description Ultra High Speed Switching Application

File Size 252.00K  /  3 Page

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    BAS19 BAS21 BAS20

Galaxy Semi-Conductor Holdings Limited
Part No. BAS19 BAS21 BAS20
OCR Text ... 1.0 1.25 V IF=100mA IF=200mA Reverse Leakage Current Junction Capacitance Reverse Recovery Time IRM Cj trr - 100 5.0 50 nA pF ns VR=100V VR=0V,f=1.0MHz IF=IR=10mAIrr=0.1*IR TYPICAL CHARACTERISTICS @ Ta=25 unles...
Description Surface mount switching diode

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    SD103AWS-G SD103BWS-G SD103CWS-G

Sensitron
Part No. SD103AWS-G SD103BWS-G SD103CWS-G
OCR Text ...= 10mA IR = 10mA IF = 20mA IF = 200mA VR = 30V VR = 20V VR = 10V VR = 0V, f = 1.0MHz IF = IR = 200mA, Irr = 0.1 x IR, RL = 100W Forward Voltage Drop Peak Reverse Current Junction Capacitance Reverse Recovery Time Notes: 1. Valid pr...
Description SCHOTTKY BARRIER SWITCHING DIODE

File Size 176.82K  /  3 Page

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    SD106WS

Galaxy Semi-Conductor Holdings Limited
Part No. SD106WS
OCR Text ...100A IF=2mA IF=15mA IF=100mA IF=200mA VR=30V VR=10V,f=1MHz TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSDB026 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification S...
Description Silicon Epitaxial Planar Diode

File Size 255.10K  /  3 Page

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    4N32 TIL113 4N29MTA-V 4N29MTB-V TIL113MTA-V TIL113MTB-V H11B255STB-V H11B255S1TA-V H11B255S1TB-V 4N29STA-V 4N29STB-V 4N2

Everlight Electronics C...
Everlight Electronics Co., Ltd
Part No. 4N32 TIL113 4N29MTA-V 4N29MTB-V TIL113MTA-V TIL113MTB-V H11B255STB-V H11B255S1TA-V H11B255S1TB-V 4N29STA-V 4N29STB-V 4N29S1TA-V 4N29S1TB-V 4N33 H11B3 H11B255STA-V 4N30 H11B3S1TA-V H11B3S1TB-V H11B255-V 4N33STA-V 4N33STB-V H11B3M-V H11B2-V H11B3-V 4N32STA-V H11B2STA-V H11B3STA-V TIL113STA-V 4N30STA-V 4N30STB-V H11B255S-V H11B255S1-V TIL113S-V TIL113S1-V TIL113M-V H11B3TA-V H11B3TB-V 4N32STB-V 4N31MTA-V H11B255M-V H11B1TA-V H11B2M-V TIL113STB-V H11B1S1TA-V H11B2S1TA-V 4N30S1TA-V 4N31S1TA-V 4N32S1TA-V 4N33S1TA-V TIL113S1TA-V H11B1-V 4N30S1TB-V 4N30MTB-V 4N30MTA-V H11B1S1-V H11B1S-V H11B1STB-V H11B1S1TB-V H11B1MTB-V H11B1MTA-V H11B1M-V H11B1STA-V 4N31S1TB-V 4N32S1TB-V TIL113S1TB-V 4N33S1TB-V H11B2S1TB-V H11B1TB-V H11B2STB-V H11B3S1-V 4N33MTA-V 4N33MTB-V
OCR Text ...5 s VCC = 10V, IC = 50mA, IF=200mA - 18 VCC = 10V, IF = 10mA, RL = 100 - - 100 s VCC = 10V, IC = 50mA, IF=200mA 4N29 4N30 4N31 * Typical values at Ta = 25C 40 Everlight Electronics Co., Ltd. Document NoPDS-E...
Description 6 PIN PHOTODARLINGTON PHOTOCOUPLER

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    PVD75-12

Nihon Inter Electronics Corporation
Part No. PVD75-12
OCR Text .../dt=20A/s Tj=25C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/s Turn-Off Time Switch Thyristor Turn-On Time Delay Time Rise Time Latching Current Holding Current Collector-Emitter Out-Off Current Gate-Emitter Leakage Current Collector-Emitter Satur...
Description PIM MODULE 7.5KW 400V

File Size 64.51K  /  3 Page

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    PVD75-6

Nihon Inter Electronics Corporation
Part No. PVD75-6
OCR Text .../dt=20A/s Tj=25C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/s Turn-Off Time Switch Thyristor Turn-On Time Delay Time Rise Time Latching Current Holding Current Collector-Emitter Out-Off Current Gate-Emitter Leakage Current Collector-Emitter Satur...
Description PIM MODULE 7.5KW 200V

File Size 64.52K  /  3 Page

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    SD103AW SD103CW

List of Unclassifed Manufacturers
ETC
Part No. SD103AW SD103CW
OCR Text ... Maximum Forward Voltage @ 20mA 200mA Maximum Leakage Current, @ TJ = 25O Maximum Reverse Recovery Time IF = 10mA, IR=10mA, IRR = 1mA, RL = ...IFM IFSM IFSM VF IR trr PTOT CJ RJA TJ TSTG SD103CW 40 40 28 SD103BW 30 30 21 350 1.55 15 0.3...
Description SCHOTTKY BARRIER DIODE

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    BAV20W BAV21W

Taiwan Semiconductor Company, Ltd
Part No. BAV20W BAV21W
OCR Text ...apacitance (Note 3) IF=100mA IF=200mA Tj=25 Tj=100 Symbol VF IR Cj trr Min _ _ _ _ VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Reverse Recovery Test ...
Description Surface Mount Switching Diode

File Size 35.68K  /  2 Page

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