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意法半导
STMicro
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| Part No. |
TDA2030 1458
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| OCR Text |
...ach output transistor
Figure 19. Safe operating area and collector characteristics of the protected power transistor
THERMAL SHUT-DOWN The presence of a thermal limiting circuit offers the following advantages: 1. An overload on the o... |
| Description |
14W Hi-Fi Audio Amplifier(14W Hi-Fi 音频放大
From old datasheet system
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| File Size |
188.98K /
12 Page |
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Maxim
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| Part No. |
MAX5043 MAX5042
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| OCR Text |
19-3046; Rev 3a; 9/04
KIT ATION EVALU ABLE AVAIL
Two-Switch Power ICs with Integrated Power MOSFETs and Hot-Swap Controller
General D...8W Junction to Ambient Thermal Resistance, JA ...............+21C/W Operating Temperature Range MAX5... |
| Description |
Two-Switch Power ICs with Integrated Power MOSFETs and Hot-Swap Controller
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| File Size |
709.60K /
22 Page |
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B MMBZ5240B MMBZ5254B MMBZ5257B MMBZ5223B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5241B MMBZ5242B MMBZ5244B MMBZ5245B MMBZ5246B MMBZ5247B MMBZ5248B MMBZ5249B MMBZ5251B MMBZ5253B MMBZ5255B MMBZ5256B MMBZ5228BD87Z MMBZ5254BD87Z MMBZ5235BD87Z MMBZ5257BD87Z MMBZ5243BD87Z MMBZ5243BNL MMBZ5239BD87Z MMBZ5239BNL MMBZ5245BD87Z MMBZ5245BNL MMBZ5256BD87Z MMBZ5246BD87Z MMBZ5246BNL MMBZ5226BNL MMBZ5226BD87Z MMBZ5250BD87Z
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| OCR Text |
...0 30 20 28 20 24 20 23 20 22 20 19 17 11 7.0 7.0 5.0 6.0 8.0 8.0 10 17 22 30 13 15 16 17 19 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4
ZZK() @ IZK (mA) 1,200 0.25 1,300 0.25 1,600 0.25 1,700 0.25 1,900 0.25 1,000 0.25 1,... |
| Description |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000
3.9V, 0.35W Zener Diode
27V, 0.35W Zener Diode
6.8V, 0.35W Zener Diode
33V, 0.35W Zener Diode
13V, 0.35W Zener Diode
9.1V, 0.35W Zener Diode
15V, 0.35W Zener Diode
30V, 0.35W Zener Diode
16V, 0.35W Zener Diode
3.3V, 0.35W Zener Diode
20V, 0.35W Zener Diode
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| File Size |
55.08K /
4 Page |
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Shanghai Lunsure Electronic...
Chenyi Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
上海朗硕科技有限公司
Shanghai LUNSURE Electronic Technology Co., Ltd.
涓?捣???绉????????
Shanghai Lunsure Electr...
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| Part No. |
MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5245B MMBZ5240B MMBZ5226B MMBZ52 MMBZ5254B MMBZ5257B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5241B MMBZ5242B MMBZ5244B MMBZ5246B MMBZ5247B MMBZ5248B MMBZ5249B MMBZ5251B MMBZ5253B MMBZ5255B MMBZ5256B MMBZ52-SERIES
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| OCR Text |
...0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 27.0 28.0 30.0 33.0
Dynamic Imped. @Izt Zzt( 28.0 24.0 23.0 22.0 19.0 17.0 11.0 7.0 7 5 6 8 8 10 17 22 30.0 13.0 15.0 16.0 17.0 19.0 21.0 23.0 25.0 29.0 33.0 35.0 41.0 44.0 49.0 58... |
| Description |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.7 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA.
3-26V Dual Operational Amplifier, Ta = -40 to 105°C; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50
5-30V Single Comparator, Ta = -25 to 85°C- Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
2-36V Dual Comparator, Ta= -40 to 125°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
0.5A, 5V, 52kHz Buck PWM Switching Regulator; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 表面贴装稳压二极
3-26V Quad Operational Amplifier, Ta= -40 to 105°C - Pb-free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 表面贴装稳压二极
Small Signal Bias Resistor Transistor SC75 NPN 50V; Package: SC-75 (SOT-416) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA.
SURFACE MOUNT ZENER DIODES
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| File Size |
20.84K /
1 Page |
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IR
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| Part No. |
IR7304
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| OCR Text |
...ILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
DIM
5
MIN .0532 .0040 .014 .0075 .189 .150
MAX .0688 .0098 .018 .0098 .196 .157
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E
1
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| Description |
HEXFET® Power MOSFET
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| File Size |
108.98K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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