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  -4.9a Datasheet PDF File

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    TY Semiconductor Co., Ltd
Part No. KDC6020C
OCR Text 4 1 2 3 3 2 1 4 5 6 bottom drain contact bottom drain contact n q1 (p) 3 2 1 4 5 6 bottom drain contact bottom drain contact n- c h...9a ?? r d s ( o n ) ? 2 7 m |? ( v g s = 4 . 5v ) ?? r d s ( o n ) ? 3 9 m |? ( v g s ...
Description N-Channel:VDS=20V ID=5.9A P-Channel:VDS=-20V ID=-4.2A RDS(ON) 55m

File Size 296.74K  /  2 Page

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    AP9973GM

Advanced Power Electronics Corp.
Part No. AP9973GM
OCR Text ...n-source voltage 60 200422051-1/4 ap9973gm pb free plating product the advanced power mosfets from apec provide the designer with the best c...9a - - 80 m v gs =4.5v, i d =2a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 59.10K  /  4 Page

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    AP9973GI

Advanced Power Electronics Corp.
Part No. AP9973GI
OCR Text ... =10v, i d =9a - - 80 m v gs =4.5v, i d =6a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =9a - 8.6 - s i dss drain-source leakage current v ds =60v, v gs =0v - - ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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    IRHF7330SE

International Rectifier
Part No. IRHF7330SE
OCR Text ...th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 1.3 s ( )v ds > 15v, i ds = 1.9a ? i dss zero gate voltage drain current 50 v ds = 0.8 x max rating,v gs =0v 250 v ds = 0.8 x max r...
Description N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 娌?? ???浠舵?搴?Rad Hard HEXFET????朵?绠々

File Size 94.41K  /  8 Page

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    AP9973GS AP9973GP

Advanced Power Electronics Corp.
Part No. AP9973GS AP9973GP
OCR Text ...l resistance junction-case max. 4.5 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change wit...9a - - 80 m v gs =4.5v, i d =6a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 59.86K  /  4 Page

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    SDM8401

SamHop Microelectronics Corp.
ETC
Part No. SDM8401
OCR Text ... DS (ON) ( m W ) TYP ID -4.5A R DS (ON) ( m W ) TYP 18.5 @ V G S = 10V 25 @ V G S = 4.5V D1 8 38.5 @ V G S = -10V 57.5 ...9A VGS =4.5V, ID= 7A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ C Max Unit 30 1 V uA 100 n...
Description Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

File Size 1,028.05K  /  9 Page

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    AP9973GD

Advanced Power Electronics Corp.
Part No. AP9973GD
OCR Text ...n-source voltage 60 200713061-1/4 ap9973gd pb free plating product the advanced power mosfets from apec provide the designer with the best c...9a - - 80 m v gs =4.5v, i d =2.0a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250u...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 57.85K  /  4 Page

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    AP6900GSM

Advanced Power Electronics Corp.
Part No. AP6900GSM
OCR Text ...typ. 70 parameter parameter 5.7 4.6 20 30 20 1.4 0.01 201121063-1/9 42 value the advanced power mosfets from apec provide the designer with...9a - - 22 m v gs =4.5v, i d =7a - - 29 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua...
Description Simple Drive Requirement, DC-DC Converter Suitable

File Size 131.49K  /  9 Page

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