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  vdd 5 7 to 7 5v idd 10ma 5 1mh Datasheet PDF File

For vdd 5 7 to 7 5v idd 10ma 5 1mh Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    Diodes, Inc.
Part No. AH182-WL-7
Description IC HALL SENSOR LP 10ma SOT-23 MAGNETIC FIELD SENSOR-HALL EFFECT, 1-6mT, 0.30V, RECTANGULAR, SURFACE MOUNT

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    Sanyo
Part No. 2SC4256
Description NPN Triple Diffused Planar Silicon Transistor 1200V/10ma High-Voltage Amplifier, High-Voltage Switching Applications

File Size 79.61K  /  3 Page

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    Sanyo
Part No. 2SC4476
Description NPN Triple Diffused Planar Silicon Transistor 1800V/10ma High-Voltage Amplifier, High-Voltage Switching Applications

File Size 92.65K  /  3 Page

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    Quantum Research Group ltd
Part No. QT60645B-AS
Description 0.5-5.5V; 10ma; 32,48,64-key QMatrix keypanel sensor IC. For security keypanels, industrial keyboards, appliance controls, outdooor keypads, ATM machines, touch-screens, automotive controls, machine tools

File Size 814.63K  /  42 Page

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    Quantum Research Group ltd
Part No. QT60645-AS QT60645-S QT60485-AS QT60485-S QT60325-AS
Description 0.5-5.5V; 10ma; 32,48,64-key QMatrix keypanel sensor IC. For security keypanels, industrial keyboards, appliance controls, outdooor keypads, ATM machines, touch-screens, automotive controls, machine tools

File Size 814.78K  /  42 Page

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    10EZ91 10EZ10 10EZ100 10EZ11 10EZ12 10EZ13 10EZ14 10EZ15 10EZ16 10EZ17 10EZ18 10EZ19 10EZ20 10EZ22 10EZ24 10EZ25 10EZ27

MICROSEMI CORP-SCOTTSDALE
Renesas Electronics, Corp.
Microsemi, Corp.
齐纳二极
MICROSEMI[Microsemi Corporation]
Part No. 10EZ91 10EZ10 10EZ100 10EZ11 10EZ12 10EZ13 10EZ14 10EZ15 10EZ16 10EZ17 10EZ18 10EZ19 10EZ20 10EZ22 10EZ24 10EZ25 10EZ27 10EZ30 10EZ33 10EZ36 10EZ39 10EZ43 10EZ45 10EZ47 10EZ50 10EZ51 10EZ52 10EZ56 10EZ62 10EZ68 10EZ82 10EZ75 10EZ5.6 10EZ4.3 10EZ3.9 10EZ4.7 10EZ6.2 10EZ5.1 10EZ6.8 10EZ7.5 10EZ8.2 10EZ9.1 10EZ9.1A 10EZ100A 10EZ10A 10EZ20A 10EZ50A 10EZ33A 10EZ6.2A 10EZ5.6A 10EZ5.1AR 10EZ6.2AR 10EZ6.8AR 10EZ8.2AR 10EZ5.6AR 10EZ7.5A 10EZ3.9AR 10EZ4.3AR 10EZ3.9R 10EZ4.7R 10EZ4.7AR 10EZ19A 30AR 10EZ45AR 10EZ52A 10EZ25R 10EZ62A
Description    Silicon 10 WATT Zener Diodes
25 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 125-250 @ 10ma, 10V Optocoupler
45 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
30 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 19 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 70-210 @ 10ma, 10V Optocoupler 50 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 100 min @ 10ma, 10V Optocoupler 51 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 22 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
6 Pin, DIP, Photodarlington Detector w/ Base CTR 100 min @ 10ma, 5V Optocoupler 14 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB
4.7 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
4.3 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
3.9 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
7.5 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
9.1 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
8.2 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
6.8 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
5.1 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
5.6 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
6.2 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB to-220, 3 PIN
16 Pin, DIP, Quad Phototransistor Detector, BVCEO 35V, CTR 50-600 @ 5mA, 5V Optocoupler
Zener Voltage Regulator Diode
6 Pin, DIP, Phototransistor Detector w/ Base, CTR 20 min @ 10ma, 5V Optocoupler
62 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULAtoR DIODE, to-220AB

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    BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 BY329F-1200 BY329X-800 BY329F-1000 BY329F-800 BY329X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 BY329F-1200 BY329X-800 BY329F-1000 BY329F-800 BY329X
Description Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10ma; Current, It av:6A; Gate Trigger Current Max, Igt:10ma RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10ma; Current, It av:6A; Gate Trigger Current Max, Igt:10ma RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Rectifier diodes fast/ soft-recovery
Rectifier diodes fast, soft-recovery

File Size 56.28K  /  7 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC5585
Description Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10ma

File Size 84.74K  /  1 Page

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    2SK596 2SK596A 2SK596B 2SK596C

Sanyo Semiconductor Corp
ETC
Sanyo Semicon Device
Part No. 2SK596 2SK596A 2SK596B 2SK596C
Description V(gdo): -20V; I(g): 10ma; 100mW; capacitor microphone application
From old datasheet system
TRANSIStoR,JFET,N-CHANNEL,100UA I(DSS),SPAK
CAPACItoR MICROPHONE APPLICATIONS

File Size 435.55K  /  6 Page

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    EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA331 E109 E111 EA100

Gilway Technical Lamp
Part No. EA401 EA404 EA406 EA432 EA430 EA444GR EA444GY EA331 E109 E111 EA100
Description Red, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10ma 12.5mcd. Typ. forward voltage at 20mA 2.0V.
Yellow, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10ma 5.0mcd. Typ. forward voltage at 20mA 2.1V.
Green, right angle, quad-level, mini LED. Lens diffused. Max.luminous intensity at 10ma 5.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright green, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 60.0mcd. Typ. forward voltage at 20mA 2.2V.
Ultra bright red, right angle, quad LED. Lens diffused. Max.luminous intensity at 20mA: 300.0mcd. Typ. forward voltage at 20mA 1.85V.
Red & green, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10ma: 32.0mcd(red), 32.0mcd(green). Typ. forward voltage at 20mA: 2.0V(red), 2.2V(green).
Green & yellow, right angle, quad-level, mini LED. Lens white diffused. Max.luminous intensity at 10ma: 32.0mcd(green), 20.0mcd(yellow). Typ. forward voltage at 20mA: 2.2V(green), 2.2V(yellow).
Red, right angle, tri-level, T-1, LED. Lens diffused. Max.luminous intensity at 20mA 50mcd. Typ. forward voltage at 20mA 2.0V.
Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Green side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V.
Ultra bright red, right angle, T-1 LED. Lens translucent. Max.luminous intensity at 20mA 500mcd. Typ. forward voltage at 20mA 1.85V.

File Size 330.21K  /  6 Page

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For vdd 5 7 to 7 5v idd 10ma 5 1mh Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

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