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  v-igbt Datasheet PDF File

For v-igbt Found Datasheets File :: 10662    Search Time::1.5ms    
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    TOSHIBA
Part No. GT40J321
OCR Text ...a) ? low saturation voltage: v ce (sat) = 2.0 v (typ.) (i c = 40 a) absolute maximum ratings (ta = 25c) characteristics sym...igbt) rth(j-c) ? ? ? 1.04 c/w thermal resistance (diode) rth(j-c) ? ? ? 2.0 c/w note 1: ...
Description IGBT for soft switching applications

File Size 368.74K  /  6 Page

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    IRGP4078DPBF IRGP4078D-EPBF

International Rectifier
Part No. IRGP4078DPBF IRGP4078D-EPBF
OCR Text ...247ad tube 25 irgp4078d-epbf v ces = 600v i nominal = 50a t j(max) = 175c v ce(on) typ. = 1.9v e g n-channel c ? ? insulated gate...igbt technology ? low switching losses ? maximum junction temperature 175c ? 5 s short circui...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

File Size 827.74K  /  11 Page

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    IRGP4063D1-EPBF IRGP4063D1PBF IRGP4063D1PBF-15

International Rectifier
Part No. IRGP4063D1-EPBF IRGP4063D1PBF IRGP4063D1PBF-15
OCR Text v ces = 600v i c = 60a, t c =100c t sc ?? 5s, t j(max) = 175c v ce(on) typ. = 1.65v @ i c = 48a g c e gate collector e...igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.45 r ? jc (diode) thermal ...
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

File Size 1,403.86K  /  12 Page

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    SEMIX453GAR12E4S

Semikron International
Part No. SEMIX453GAR12E4S
OCR Text ...trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e...igbt v ces 1200 v i c t j = 175 c t c =25c 683 a t c =80c 526 a i cnom 450 a i crm i crm = 3xi cnom...
Description Trench IGBT Modules

File Size 154.61K  /  6 Page

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    BUP307 Q67078-A4201-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP307 Q67078-A4201-A2
OCR Text ...bol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 35 23 TC = 25 C TC...IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC 0.4 K/W E...
Description From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) IGBT的(低正向压降高开关速度低尾电流的无闩锁雪崩额定

File Size 343.52K  /  7 Page

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    SEMIX453GAR12E4S10

Semikron International
Part No. SEMIX453GAR12E4S10
OCR Text ...trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognized, file no. ...igbt v ces 1200 v i c t j = 175 c t c =25c 683 a t c =80c 526 a i cnom 450 a i crm i crm = 3xi cnom...
Description Trench IGBT Modules

File Size 145.27K  /  5 Page

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    FMG2G75US120

FAIRCHILD[Fairchild Semiconductor]
Part No. FMG2G75US120
OCR Text ...ration Voltage : VCE(sat) = 2.6 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7P...IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max....
Description Molding Type Module

File Size 496.50K  /  7 Page

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    SEMIX453GAL12E4S10

Semikron International
Part No. SEMIX453GAL12E4S10
OCR Text ...trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognized, file no. ...igbt v ces 1200 v i c t j = 175 c t c =25c 683 a t c =80c 526 a i cnom 450 a i crm i crm = 3xi cnom...
Description Trench IGBT Modules

File Size 145.19K  /  5 Page

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For v-igbt Found Datasheets File :: 10662    Search Time::1.5ms    
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