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row.100 Datasheet PDF File

For row.100 Found Datasheets File :: 19478 Search Time::1.375ms
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				Elpida Memory
Part No.	HB52RD648DC-B HB52RF648DC-B
OCR Text	... to A12 Function Address input Row address A0 to A12 Column address A0 to A9 BA0/BA1 DQ0 to DQ63 S0/S1 RE CE W DQMB0 to DQMB7 CK0/CK1 CKE0...100 MHz CL = 2, 3 0 0 1 0 1 0 0 0 0 x x 1 1 0 1 0 1 1 1 1 x x 1 1 0 0 0 0 0 1 0 x x 0 0 0 0 1 0 0 0 ...
Description	512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM
File Size	154.11K / 20 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	MC-4216LFG641
OCR Text	...vcc a0 - a11 : address inputs [ row : a0 - a11, column : a0 - a11] dq0 - dq63 : data inputs / outputs / ras0, /ras2 : row address strobe / c...100 m s (/ras, /cas inactive) and then, execute eight /cas before /ras or /ras only refresh cycles ...
Description	3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
File Size	280.94K / 32 Page	View it Online	Download Datasheet

				ESS Technology ETC[ETC] List of Unclassifed Manufacturers
Part No.	ES4428 ES4427
OCR Text	...enable. DRAM write enable. DRAM row address strobe 0. DRAM row address strobe 1 (active-low). DRAM address bus select 1 output. Only active ...100-pin PQFP 42 41 40 39 38 37 36 35 34 33 32 31 100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17...
Description	Web/DVD Set-Top Box Solution
File Size	119.20K / 10 Page	View it Online	Download Datasheet

				Elpida Memory, Inc.
Part No.	HB52E649E12 HB52E649E12-A6B HB52E649E12-B6B
OCR Text	... to A12 Function Address input Row address Column address BA0/BA1 DQ0 to DQ63 CB0 to CB7 S0, S2 RE CE W DQMB0 to DQMB7 CK0 to CK3 CKE0 WP ...100 MHz CL = 2/3 1 0 0 0 1 0 0 0 1 1 0 1 0 0 0 0 0 x x 0 1 1 1 0 1 1 1 0 0 1 0 1 1 1 1 1 x x 0 1 1 1...
Description	512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC100 SDRAM 512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM 512 MB Registered SDRAM DIMM 64-Mword 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
File Size	141.25K / 16 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), a...100 1 1 110 100 90 80 0.5 200 110 100 250 200 K4E170411D 90 80 2 1 90 80 80 70 1 250 90 80 300 250 ...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), po...100 1 1 110 100 90 80 0.5 200 110 100 250 200 K4F170411D 90 80 2 1 90 80 80 70 1 250 90 80 300 250 ...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS64403AL
OCR Text	...s Inputs Refresh Address Inputs Row Address Strobe Column Address Strobe Output Enable Pin WE I/O0 - I/O3 VCC VSS NC GM71V64403A GM71VS64...100 0.5 300 160 140 500 uA 4, 5 mA uA mA 4 1,3 mA 2 mA Unit V V mA 1,2 Note ICC3 ICC4 ICC5 ...
Description	(GM71VS64403AL / GM71V64403A) 16M x 4-Bit CMOS DRAM
File Size	285.24K / 25 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS17403CL
OCR Text	...s Inputs Data Input/Data Output Row Address Strobe Column Address Strobe Pin WE OE VCC VSS NC Function Read/Write Enable Output Enab...100 90 80 2 100 90 80 90 80 75 1 100 100 90 80 300 Unit V V Note mA 1, 2 ICC2 mA ...
Description	(GM71VS17403CL / GM71V17403C) 4M x 4-Bit CMOS DRAM
File Size	127.26K / 10 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	... address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block D...100 -- 2 -- 90 2 mA mA -- 1 -- 1 -- 1 mA Standby current (L-version) ICC2...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	GM71VS17400CL
OCR Text	...s Inputs Data-input/Data-output Row Address Strobe Column Address Strobe Pin WE OE VCC VSS NC Function Read/Write Enable Output Enab...100 90 80 2 100 90 80 90 80 70 1 100 100 90 80 Unit V V Note mA 1, 2 ICC2 mA I...
Description	(GM71VS17400CL / GM71V17400C) 4M x 4-Bit CMOS DRAM
File Size	132.99K / 10 Page	View it Online	Download Datasheet

For row.100 Found Datasheets File :: 19478 Search Time::1.375ms
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