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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
EL5378IUZ-T7 EL5178 EL5178IS EL5178IS-T13 EL5178IS-T7 EL5178ISZ EL5178ISZ-T13 EL5178ISZ-T7 EL5178IY EL5178IY-T13 EL5178IY-T7 EL5178IYZ EL5178IYZ-T13 EL5178IYZ-T7 EL5378 EL5378IU EL5378IU-T13 EL5378IU-T7 EL5378IUZ EL5378IUZ-T13
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| OCR Text |
...D = 1k, CLD = 2.7pF, [RF = 604, RG = 402 (EL5178)], [RF = 402, RG = 274 (EL5378)], unless otherwise specified. CONDITIONS MIN TYP MAX UNIT
DESCRIPTION
AV = 2, CLD = 2.7pF AV = 5, CLD = 2.7pF AV = 2, CLD = 2.7pF, RLD = 200
700 80 32... |
| Description |
700MHz Differential Twisted-Pair Drivers TRIPLE LINE DRIVER, PDSO28
700MHz Differential Twisted-Pair Drivers LINE DRIVER, PDSO8
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| File Size |
969.38K /
15 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN26A090IV
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| OCR Text |
...F IGR Tch
im l e
Condition
RG=5 RG=5 Vp VGDO P3dB d GL Rth
a in
Rating Limit
50 <TBD >-7.2 200
120 -5 150 -65 to +175 250
...402 49.8 0.255 -19.0 0.296 -100.5 0.371 -138.8 0.406 -159.7 0.401 -175.1 0.357 170.2 0.272 154.9 0.1... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
102.49K /
4 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDPF44N25T FDPF44N25
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| OCR Text |
...cteristics VDD = 125V, ID = 44A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 200V, ID = 44A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed... |
| Description |
250V N-Channel MOSFET
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| File Size |
836.01K /
7 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLM1314-18F
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| OCR Text |
...t Symbol VD S IGF IGR Condition RG=25 ohm RG=25 ohm Limit *... 10 *... 44.6 * -9.6 Unit V mA mA
ELECTRICAL CHARACTERISTICS (Case Temperat...402 0.420 0.434 0.443 0.452 0.455 0.449 0.439 0.418 0.392 0.362 0.320 0.274
S22ang 115.1 101.9 89... |
| Description |
X,Ku-Band Internally Matched FET
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| File Size |
110.05K /
5 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IPB14N03LAG
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| OCR Text |
...ate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 A V 3.2 62 40 K/W Values typ. max. Unit
-
...402 62 10 41 26 3.9 ns pF Values typ. max. Unit
Reverse recovery charge
Q rr
-
-
10
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| Description |
OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
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| File Size |
277.09K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHLNA77064 IRHLNA73064
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| OCR Text |
...DD = 30V, ID = 56A, VGS = 4.5V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Mi... |
| Description |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
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| File Size |
196.90K /
9 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
MS5F6015
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| OCR Text |
...,f=1MHz Vcc=600V Ic=50A VGE=15V RG=22 IF=50A VGE=0V Tj=25 C Tj=125oC o Tj=25 C Tj=125oC
o
V nF
us
a
Forward on voltage Reverse ...402 method Test Method 403 Reference 1 Condition code B
3 Vibration
4 Shock
5 Solderabitlit... |
| Description |
IGBT MODULE
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| File Size |
459.14K /
13 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
MS5F6058
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| OCR Text |
...f=1MHz Vcc=600V Ic=300A VGE=15V RG=2.0 IF=300A VGE=0V Tj=25oC Tj=125oC Tj=25oC Tj=125oC
Forward on voltage
Reverse recovery time IF=30...402 method Test Method 403 Reference 1 Condition code B
3 Vibration
5
(0:1)
4 Shock
T... |
| Description |
IGBT MODULE
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| File Size |
423.78K /
13 Page |
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it Online |
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SEMIWELL[SemiWell Semiconductor]
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| Part No. |
SFB60N03L
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| OCR Text |
...ote 4, 5)
VDD =15V, ID =30A, RG =50 see fig. 13.
(Note 4, 5)
20 55 53 75 21.5 3.6 10.7
50 120 116 160 28 nC ns
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Source-Dra...402 0.319 0.488 0.185 0.055 0.055
A B
D E
F C I 2 1 G 3 H J K L
1. Gate 2. Drain 3... |
| Description |
Logic N-Channel MOSFET
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| File Size |
998.03K /
7 Page |
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it Online |
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Price and Availability
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