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Micross Components
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| Part No. |
ICE20N170
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| OCR Text |
... q g gate charge total - 62 - v plateau gate plateau voltage - 5.8 - v reverse diode v sd diode forward voltage - 0.9 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 407 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q r... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
753.80K /
4 Page |
 View
it Online |
Download Datasheet
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Micross Components
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| Part No. |
ICE20N170U
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| OCR Text |
... q g gate charge total - 62 - v plateau gate plateau voltage - 5.8 - v reverse diode v sd diode forward voltage - 0.9 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 407 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q r... |
| Description |
N-Channel Enhancement Mode MOSFET
|
| File Size |
755.00K /
4 Page |
View
it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE20N170FP
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| OCR Text |
... q g gate charge total - 62 - v plateau gate plateau voltage - 5.8 - v reverse diode v sd diode forward voltage - 0.9 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 407 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q r... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
1,005.27K /
4 Page |
View
it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPP30N10
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| OCR Text |
..., v gs =0 to 10v - 49 65 gate plateau voltage v (plateau) v dd =80v, i d =35a - 6.1 - v reverse diode inverse diode continuous forward current i s t c =25c - - 35 a inverse diode direct current, pulsed i sm - - 140 inverse diode forward... |
| Description |
SIPMOS Power Transistor
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| File Size |
477.34K /
8 Page |
View
it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE60N160B
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| OCR Text |
... q g gate charge total - 85 - v plateau gate plateau voltage - 6 - v reverse diode v sd diode forward voltage - 1.0 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 440 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q rr ... |
| Description |
N-Channel Enhancement Mode MOSFET
|
| File Size |
762.00K /
4 Page |
View
it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE60N150
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| OCR Text |
... q g gate charge total - 85 - v plateau gate plateau voltage - 6 - v reverse diode v sd diode forward voltage - 1.0 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 440 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q rr ... |
| Description |
N-Channel Enhancement Mode MOSFET
|
| File Size |
758.79K /
4 Page |
View
it Online |
Download Datasheet |
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|
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Micross Components
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| Part No. |
ICE60N150FP
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| OCR Text |
... q g gate charge total - 85 - v plateau gate plateau voltage - 6 - v reverse diode v sd diode forward voltage - 1.0 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 440 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q rr ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
757.96K /
4 Page |
View
it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE60N130
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| OCR Text |
... q g gate charge total - 82 - v plateau gate plateau voltage - 5.5 - v reverse diode v sd diode forward voltage - 1.0 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 423 - ns v rr = 480v, i s = i f , d if /d t = 100 a/s q r... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
760.27K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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