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  n-mos Datasheet PDF File

For n-mos Found Datasheets File :: 18828    Search Time::1.14ms    
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    ATA683210 ATA6832-PIQW

ATMEL Corporation
聚兴科技股份有限公司
Part No. ATA683210 ATA6832-PIQW
OCR Text ... P VS2 DI 4 P S F I N H O V L n. u. n. u. n. u. n. u. n. u. n. H u. S 3 L S 3 H S 2 L S 2 H S 1...MOS high-side switch 3 and low-side switch 3 with internal reverse diodes; short circuit protection;...
Description Three Half-bridge Outputs Formed by Three High-side and Three Low-side Drivers

File Size 251.53K  /  17 Page

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    Q67007-A9399 BTS7710G

Infineon Technologies AG
Part No. Q67007-A9399 BTS7710G
OCR Text ...ation (top view) DL1 IL1 DL1 N.C. DHVS GND IH1 ST IH2 1 2 3 LS-Leadframe 4 5 6 7 HS-Leadframe 8 9 28 DL1 27 SL1 26 SL1 25 DL1 24 DH...MOS-FETs. Output Stages The output stages consist of an low RDS ON Power-MOS H-bridge. In H-bridge c...
Description Transient Voltage Suppressor Diodes 10mOhm TrilithIC
Smart Motorbridges Driver ICs - 110mOhm TrilithIC

File Size 233.13K  /  16 Page

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    Q67007-A9401 BTS7750G

List of Unclassifed Manufacturers
Infineon Technologies AG
Electronic Theatre Controls, Inc.
Part No. Q67007-A9401 BTS7750G
OCR Text ... DL1 1 IL1 2 DL1 3 LS-Leadframe N.C. 4 DHVS 5 GND 6 IH1 7 HS-Leadframe ST 8 IH2 9 DHVS 10 N.C. 11 LS-Leadframe DL2 12 IL2 13 DL2 14 28 DL...MOS-FETs. Output Stages The output stages consist of an low RDS ON Power-MOS H-bridge. In H-bridge c...
Description Smart Motorbridges Driver ICs - 115mOhm TrilithIC

File Size 237.22K  /  16 Page

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    TPC8405

Toshiba Semiconductor
Part No. TPC8405
OCR Text N, P Channel MOS Type (P Channel U-MOS IV/N Channel U-MOS III) TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Low drain-source ON resistance : P Channel RDS (ON) = 25 m (typ....
Description Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)

File Size 263.12K  /  11 Page

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    AXElite
Part No. AX8113
OCR Text ... larger than operate point b op n (north pole), the out2 will be turned on (low), the output is held until b is lower than release point...mos awake/sleep timing control hall plate p-mos vdd n-mos p-mos out2 gnd v?mw`r?y?b?...
Description Ultra-sensitive Hall Effect Switch

File Size 373.13K  /  7 Page

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    STT8205S

SeCoS Halbleitertechnologie GmbH
Part No. STT8205S
OCR Text N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used fo...
Description N-Channel Enhancement Mode Power Mos.FET

File Size 529.35K  /  4 Page

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    SST3585

SeCoS Halbleitertechnologie GmbH
Part No. SST3585
OCR Text N And P-Channel Enhancement Mode Power Mos.FET SST3585 Description The SST3585 provide the designer with best combination of fast switching,low on-resistance and cost effectiveness. The SOT-26 package is universally used for all com...
Description N And P-Channel Enhancement Mode Power Mos.FET

File Size 619.63K  /  7 Page

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    KKX232 KKX232D KKX232N

KODENSHI KOREA CORP.
Part No. KKX232 KKX232D KKX232N
OCR Text ...ble with input levels of K-MOS, n-mos and TTL integrated circuits. * Supply voltage : 5V * Low input current: 1.0 ; 0.1 at = 25 . * Output current 24 mA. * Latching current not less than 450 mA at = 25 * Tolerable value of static potenti...
Description Interface transceiver of RS-232 standard with one supply voltage

File Size 226.58K  /  7 Page

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    ATA683209 ATA6832-PIQW

ATMEL Corporation
Part No. ATA683209 ATA6832-PIQW
OCR Text ... P VS2 DI 4 P S F I N H O V L n. u. n. u. n. u. n. u. n. u. n. H u. S 3 L S 3 H S 2 L S 2 H S 1...MOS high-side switch 3 and low-side switch 3 with internal reverse diodes; short circuit protection;...
Description    High Temperature Triple Half-bridge Driver with SPI and PWM

File Size 210.44K  /  17 Page

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    SGT8810

SeCoS Halbleitertechnologie GmbH
Part No. SGT8810
OCR Text N-Channel Enhancement Mode Power Mos.FET Description The SGT8100 used advanced trench technology to provide excellent on-resistance which is an extremely efficient and cost-effective device. It also provides low gate charge and operates...
Description N-Channel Enhancement Mode Power Mos.FET

File Size 563.96K  /  4 Page

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