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For n b g Found Datasheets File :: 134652    Search Time::10.438ms    
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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...ntegral reverse --- --- 550 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 82A, VgS = 0VT --- 93 140 ns TJ = 25C, IF = 82A --- 340 510 n...b R )D SS tp 160 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( C) IAS ...
Description 75V Single n-Channel HEXFET Power MOSFET in a D2-Pak package<br>75V Single n-Channel HEXFET Power MOSFET in a TO-262 package<br>AUTOMOTIVE MOSFET<br>Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)<br>Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)<br>Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)<br>Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?<br>
File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PbF
OCR Text ...ntegral reverse --- --- 550 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 82A, VgS = 0VT --- 93 140 ns TJ = 25C, IF = 82A --- 340 510 n...b R )D SS tp 160 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( C) IAS ...
Description 75V Single n-Channel HEXFET Power MOSFET in a TO-220Ab package<br>Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)<br>Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)<br>Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?<br>
File Size 129.31K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4b905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...integral reverse --- --- -260 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -38A, VgS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 ...b 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)<br>Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)<br>-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package<br>-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package<br>
File Size 159.46K  /  10 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...integral reverse --- --- -110 p-n junction diode. S --- --- -1.3 V TJ = 25C, IS = -16A, VgS = 0V --- 71 110 ns TJ = 25C, IF = -16A --- 170 ...b Y R D S (o n) -ID , D rain C urrent (A ) 100 100 100 s TJ = 17 5 C T J = 2 5C 10...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)<br>Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)<br>
File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...howing the g integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VgS = 0V TJ = 25C, IF = -16A di/dt = -100A/s notes: Repeti...b Y R D S (o n) -ID , D rain C urrent (A ) 100 100 100 s TJ = 17 5 C TJ = 25 C 10 ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)<br>
File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...tor Corporation IRF530A n-CHAnnEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol bVDSS bV/...b) support or sustain life, or (c) whose support device or system, or to affect its safety or failur...
Description n-CHAnnEL POWER MOSFET<br>Advanced Power MOSFET<br>
File Size 253.11K  /  7 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text n - CHAnnEL EnHAnCEMEnT MODE POWER MOS TRAnSISTOR TYPE IRF530 IRF530F I s s s s s s s s V DSS 100 V 100 V R DS(on) < 0.16 < 0.16 ...b D E F F1 F2 g g1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 1...
Description From old datasheet system<br>n - CHAnnEL EnHAnCEMEnT MODE POWER MOS TRAnSISTOR<br>
File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text n - CHAnnEL EnHAnCEMEnT MODE POWER MOS TRAnSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 ID 10 A s s TYPICA...b D E F F1 F2 g g1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 ...
Description n - CHAnnEL EnHAnCEMEnT MODE POWER MOS TRAnSISTOR<br>From old datasheet system<br>
File Size 76.48K  /  5 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530nS IRF530nL
OCR Text ...integral reverse --- --- 60 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 9.0A, VgS = 0V --- 130 190 ns TJ = 25C, I F = 9.0A --- 650 9...b Y R D S (o n) I D , D rain Current (A ) 100 T J = 1 75 C 10 10 s T J = 25 C 10 ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)<br>HEXFET Power MOSFET<br>Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)<br>
File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530n
OCR Text n-channel TrenchMOSTM transistor IRF530n FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resi...b c e e 0 5 scale 10 mm DIMEnSIOnS (mm are the original dimensions) UnIT mm A 4.5 ...
Description n-channel TrenchMOS transistor(n沟道 TrenchMOS 晶体<br>n-channel TrenchMOS TM transistor<br>
File Size 95.87K  /  7 Page

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