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  multi-epitaxial Datasheet PDF File

For multi-epitaxial Found Datasheets File :: 478    Search Time::3.937ms    
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    MA4AGBLP912

Tyco Electronics
Part No. MA4AGBLP912
OCR Text ...rumentation, and other wideband multi-throw switch assemblies. Storage Temperature Mounting Temperature C.W. Incident RF Power Forward D.C. Current Reverse D.C. Voltage @ -10 A 1. Exceeding any of these values may result in permanent ...
Description AlGaAs Beam Lead PIN Diode

File Size 83.75K  /  5 Page

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    ST13007D

STMICROELECTRONICS[STMicroelectronics]
Part No. ST13007D
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RAT...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 212.11K  /  7 Page

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    ST13007DFP

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. ST13007DFP
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC...
Description    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

File Size 219.03K  /  7 Page

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    W83176R-73506 X13005 STX13005 STX13005_05 STX13005-AP STX1300505

STMICROELECTRONICS[STMicroelectronics]
Part No. W83176R-73506 X13005 STX13005 STX13005_05 STX13005-AP STX1300505
OCR Text ...manufactured using high voltage multi-epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide ...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 255.89K  /  9 Page

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    意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. BUL12801 BUL128 BUL128-K
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 231.96K  /  7 Page

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    BUL138FP

STMicroelectronics N.V.
Part No. BUL138FP
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is design...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压快速开关NPN电源晶体

File Size 253.15K  /  6 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. BUL39D01 BUL39D
OCR Text ...manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in electronics transformers for halogen lamps. TO-220 INTERNAL SCHEMATIC DI...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 195.45K  /  6 Page

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    BUL41605 BUL416B

STMicroelectronics
Part No. BUL41605 BUL416B
OCR Text ...manufactured using high voltage multi-epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost sw...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 204.42K  /  8 Page

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    BUL704

STMicroelectronics
Part No. BUL704
OCR Text ...manufactured using high voltage multi-epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description High voltage fast-switching npn power transistor

File Size 234.18K  /  11 Page

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    BULB128 BULB128-1

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BULB128 BULB128-1
OCR Text ...manufactured using high voltage multi-epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 212.36K  /  7 Page

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For multi-epitaxial Found Datasheets File :: 478    Search Time::3.937ms    
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