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  m j Datasheet PDF File

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mj A mj V/ns C Thermal Resistance Parameter RjC RCS RjA junction-to-Case Case-to...j A 0.1 1 10 100 -4 .5 V 20 s P U L S E W ID T H TC = 17 5C j 0.1 1 10 1 1 A 100 ...
Description Power mOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...2. Duty Factor, D=t /t2 1 3. Tj m -TC =PD m *Z j C (t) Z (t) , PDm t1 t2 jC 10- 5 10- 4 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] N-CHANNEL POWER mOSFET Fig 12. Gate Charge Test...
Description N-CHANNEL POWER mOSFET
Advanced Power mOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...ngle P ulse A valanche E nergy (m j) VDS D.U.T. RG + V - DD 10 V 350 TO P 300 B O TTO m 250 ID 3.7 A 6.4A 9 .0 A IAS tp 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 150 100 50 ...
Description Power mOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power mOSFET
Power mOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... V ID = 17 A g RDS(ON) 110 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope ...j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CON...
Description N-channel TrenchmOS transistor(N沟道 TrenchmOS 晶体
N-channel TrenchmOS Tm transistor

File Size 95.87K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...S = 16V, ID = 7A 17 25 m V A mA Gate Threshold Voltage* VGS(th) IDSS Gate-Source Leakage Current* Total Gate Charge Synch FET...j = 25C T j = 150C 1.5 (Normalized) 10 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 ...
Description mOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ....2 min 30 17 25 Typ max Units V m V A mA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS,ID = 250A VDS = 24V, VGS = 0V VDS = 24...j = 25C 1.5 (Normalized) T j = 150C 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160...
Description mOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...Typ - 17 max - 25 Units V m V A mA nA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0AR VDS = VGS ,ID = 250A VDS = 24V, VGS = 0...j = P Dm x Z thjA + TA 0.1 1 PDm t1 t2 10 t1 , Rectangular Pulse Duration (sec) Figure 9....
Description Circular Connector; mIL SPEC:mIL-C-26482, Series I, Solder; Body material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩mOSFET肖特基二极管
FETKY mOSFET / SCHOTTKY DIODE
FETKY⑩ mOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...Typ - 17 max - 25 Units V m V A mA nA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0AR VDS = VGS ,ID = 250A VDS = 24V, VGS = 0...j = P Dm x Z thjA + TA 0.1 1 PDm t1 t2 10 t1 , Rectangular Pulse Duration (sec) Figure 9....
Description 30V FETKY - mOSFET and Schottky Diode in a SO-8 package
FETKY mOSFET / SCHOTTKY DIODE
FETKY⑩ mOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...Typ - 17 max - 25 Units V m V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0A VDS = VGS,ID = 250A VDS = 24V, VGS = 0 VDS = 24V...j = P Dm x Z thjA + TA 0.001 0.01 0.1 1 10 10 0.0001 t1 , Rectangular Pulse Duration (sec) ...
Description N Channel Application Specific mOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...in Typ max Units 30 - 17 - 25 V m V A Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS, ID = 250A VDS = 24V, VGS = 0 VDS = 24V, ...j = P Dm x Z thjA + TA 0.01 0.1 1 10 100 1000 10 1 0.1 0.001 t1 , Rectangular Pulse Dura...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, mOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power mOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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