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IRF[International Rectifier]
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| Part No. |
IRFI1310G
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| OCR Text |
...00 125 150 175
Starting TJ , juntion Temperature (C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
... |
| Description |
Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
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| File Size |
319.89K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30FD1
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| OCR Text |
...
RG, Gate Resistance ()
T J, juntion Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4BC30FD1
8000 R G = 22 7000 TJ = 150C VCE= ... |
| Description |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
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| File Size |
359.04K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGPC20K
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| OCR Text |
...pulse width limited
by maximum juntion temperature.
Pulse width 5.0s,
single shot.
VCC=80%(VCES), VGE=20V, L=10H,
R G= 50, ( See fig. 13a )
Pulse width 80s; duty factor 0.1%.
IRGPC20K
16
For both:
Triangular wave:
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| Description |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
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| File Size |
107.33K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL630S
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| OCR Text |
... 125
A
150
Starting TJ , juntion Temperature (C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
5.0V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
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| File Size |
308.41K /
8 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRLI620G IRLI620
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| OCR Text |
... 125
A
150
Starting TJ , juntion Temperature (C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
5.0V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.80ohm，身份证\u003d 4.0a上）
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| File Size |
295.54K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRLI640G IRLI640
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| OCR Text |
... 125
A
150
Starting TJ , juntion Temperature (C)
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
5.0V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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| Description |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)
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| File Size |
288.15K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MBR20S100CT
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| OCR Text |
...5
[A]
TJ=25C
DC
20
juntion Capacitance, CJ[pF]
Average Forward Current, I
F(AV)
15
10
100 90 80 70 60 50 0 20 40 60 80 100
5
0 0 20 40 60 80 100 120 140 160
Reverse Voltage, VR[V]
Case Temperature, TC... |
| Description |
Schottky Barrier Rectifier
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| File Size |
103.76K /
4 Page |
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Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
http://
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| Part No. |
MBR545F
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| OCR Text |
...erse Voltage
700
10
o
juntion Capacitance, C J[pF]
500 400 300
200
o
TJ=25 C
Transient Thermal Impedance [ C/W]
600
1
100 90 80 0 10 20 30 40
100
1m
10m
100m
1
10
Reverse Voltage, VR[V]... |
| Description |
5 Amp Schottky Barrier Rectifier 45 Volts 5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
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| File Size |
89.48K /
3 Page |
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it Online |
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Price and Availability
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