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International Rectifier
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| Part No. |
IRFP23N50LPBF
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| OCR Text |
.../dt = 14V/ns. (See Figure 12). ISD 23A, di/dt 430A/s, VDD V(BR)DSS, TJ 150C.
Pulse width 300s; duty cycle 2%. Coss eff. is a fix...5.5V 5.0V BOTTOM 4.5V TOP
100
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Cur... |
| Description |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
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| File Size |
195.87K /
9 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
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| Part No. |
W9NK90Z B9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z
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| OCR Text |
...mited by safe operating area 3. ISD 10A, di/dt 200A/s,VDD V(BR)DSS, Tj TJMAX
Table 2.
Symbol
Thermal data
Value Parameter TO-220 TO-20FP DPAK 0.78 62.5 300 3.1 Unit TO-247 0.78 50 C/W C/W C
Rthj-case Rthj-a Tl
Thermal resist... |
| Description |
STP9NK90Z
N-CHANNEL 900V - 1.1Ohm - 8A - TO-220/FP-D2PAK-TO-247 Zener-Protected SuperMESH MOSFET
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| File Size |
547.54K /
16 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
W80NF06 B80NF06 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 P80NF06
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| OCR Text |
...06 - STW80NF06 Table 6.
Symbol ISD ISDM VSD
(1) (2)
Electrical characteristics
Source drain diode
Parameter Source-drain current So...5 Unit A A V ns nC A
trr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: Pu... |
| Description |
N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET
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| File Size |
279.94K /
14 Page |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
W45NM60 STW45NM60
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| OCR Text |
...mited by safe operating area 2. ISD < 45A, di/dt < 400A/s, VDD < 80% V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Par...5 0.11 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Coss eq.(2)
Dynamic
... |
| Description |
N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmes TM Power MOSFET
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| File Size |
276.71K /
12 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
W45NM50 STW45NM50
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| OCR Text |
...mited by safe operating area (1)ISD 45A, di/dt 400A/s, VDD V(BR)DSS, T j T JMAX.
Table 4: Thermal Data
Rthj-case Rthj-amb Tl Thermal R...5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetiti... |
| Description |
N-CHANNEL 550V Tjmax - 0.08ohm - 45A TO-247 MDmesh TM MOSFET
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| File Size |
178.65K /
9 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
W28NK60Z STW28NK60Z
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| OCR Text |
...ited by safe operating area (1) ISD 27 A, di/dt 200 A/s, VDD V(BR)DSS, T J TJMAX
Table 4: Thermal Data
Rthj-case Rthj-amb Tl Thermal Res...5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetiti... |
| Description |
N-CHANNEL 600 V - 0.155?/a> - 27A TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET
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| File Size |
203.00K /
10 Page |
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it Online |
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Price and Availability
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