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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY62U8200BLLSR-I-70
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| OCR Text |
...0 5 25 - 25 ~85(e) hy62u8200 b -i 2.7~3.3 70 */ 85/100 5 25 -40~85( i ) note 1. blank : commercial, e : extended , i : industrial ...4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 /oe a10 dq8 dq7 dq6... |
| Description |
256K X 8 STANDARD SRAM, 70 ns, PDSO32
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| File Size |
150.54K /
10 Page |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY62U8100BLLSR-I-85
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| OCR Text |
...p - 525 mil - . 32 - tsop-i - 8x20 (standard and reversed) -. 32 - stsop-i - 8x13.4 (standard and reversed) product voltage speed operation standby current( ua) temperature no. (v) ( ns) current / icc ( ma) ll (... |
| Description |
128K X 8 STANDARD SRAM, 85 ns, PDSO32
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| File Size |
154.51K /
10 Page |
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POWER-ONE INC
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| Part No. |
BWS1205-8-I
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| OCR Text |
...o +85c industrial range (add -i to p/n) -40 to +85c storage range -40 to +125c humidity max., non-condensing 95% vibration, 3 axes, 5 min...4.5 - 9 vdc 12 vdc nominal 9 - 18 vdc reflected ripple 20% i in max. reverse input current 100% i ... |
| Description |
1-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE
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| File Size |
100.67K /
3 Page |
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Renesas Technology
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| Part No. |
R1LV1616H-I
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| OCR Text |
i series wide temperature range version 16 m sram (1-mword 16-bit / 2-mword 8-bit) rej03c0195-0101 rev.1.01 nov.18.2004 descript...4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 3... |
| Description |
Wide Temperature Range Version 16M SRAM
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| File Size |
190.21K /
21 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A
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| OCR Text |
...x.) 30mA PKG Type
K1S161611A-I
Industrial(-40~85C)
2.7V~3.1V
70ns
48-FBGA-6.00x7.00
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A
LB
OE
A0
A1
A2
CS2
Vcc Vss... |
| Description |
1Mx16 bit Uni-Transistor Random Access Memory
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| File Size |
178.10K /
10 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S16161CA-I K1S16161CA DSK1S16161CA
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| OCR Text |
...x.) 35mA PKG Type
K1S16161CA-I
Industrial(-40~85C)
2.7~3.1V
48-FBGA-6.00x7.00
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
A
LB
OE
A0
A1
A2
CS2
Vcc Vss
B
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| Description |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
184.67K /
10 Page |
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http://
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| Part No. |
LA118B-260-I
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| OCR Text |
i d data sheet ligitek electronics co.,ltd. property of ligitek only led array la118b/260-i
note : 1.all dimension are in millimeter tol...4.3 1 2 y g 1 2 320.5 0.5 typ - + 2.54typ 4.3 3.3 1.5max 3.1 2.9 4fd 21.2 0.5typ 3.30.3 - + 12 - + ... |
| Description |
LED ARRAY
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| File Size |
111.90K /
6 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K1S2816BCM-I K1S2816BCM
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| OCR Text |
...B1, Max.) 130A(<40C) K1S2816BCM-I Industrial(-40~85C) 1.7~2.0V 70ns 250A(<85C) 40mA TBD Operating (ICC2, Max.) PKG Type
PIN DESCRIPTION
...4-
Revision 1.0 April 2005
K1S2816BCM
PRODUCT LIST
Industrial Temperature Product(-40~85C) P... |
| Description |
8Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
132.33K /
10 Page |
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it Online |
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