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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM300DU-34KA
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified... |
| Description |
Dual IGBTMOD 300 Amperes/1700 Volts
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| File Size |
482.92K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM50DU-24H
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Dual IGBTMODU-Series Module 50 Amperes/1200 Volts
Dual IGBTMOD U-Series Module 50 Amperes/1200 Volts
Dual IGBTMOD⑩ U-Series Module 50 Amperes/1200 Volts
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| File Size |
57.25K /
4 Page |
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it Online |
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Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
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| Part No. |
CM600DU-24F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified... |
| Description |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
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| File Size |
62.55K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600DU-5F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified... |
| Description |
Dual IGBTMOD 600 Amperes/1200 Volts
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| File Size |
71.36K /
4 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM75DU-12F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
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| File Size |
371.85K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
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| Part No. |
CM75DU-24F
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
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| File Size |
106.60K /
4 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM75DU-24H
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
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| File Size |
57.58K /
4 Page |
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it Online |
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POWEREX INC
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM900DU-24NF
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| OCR Text |
...ts of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifie... |
| Description |
Mega Power Dual??IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual⑩ IGBTMOD 900 Amperes/1200 Volts
Mega Power Dual?/a> IGBTMOD 900 Amperes/1200 Volts
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| File Size |
75.65K /
4 Page |
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it Online |
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INTEGRAL[Integral Corp.]
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| Part No. |
IL9001
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| OCR Text |
...and C compatible. Each channel (halfbridge) of the device is controlled by a separate logic input, while a common enable controls both channels.
Features Supply voltage up to 48V 5A max peak current (2A max. for L6201) Total RMS Current up... |
| Description |
DMOS FULL BRIDGE DRIVER
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| File Size |
164.49K /
5 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IR04H420
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| OCR Text |
...minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts.
Product Summary
VIN (max) ton/off trr RDS(on) PD (TA = 25 C) 500... |
| Description |
500V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package
HIGH VOLTAGE HALF-BRIDGE
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| File Size |
60.48K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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