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For ecs Found Datasheets File :: 828    Search Time::1.547ms    
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    IRG4PH40K

IRF[International Rectifier]
Part No. IRG4PH40K
OCR Text ...rwise specified) V(BR)CES V(BR)ecs V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakd...
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 154.31K  /  8 Page

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    IRG4PH40S

International Rectifier, Corp.
Part No. IRG4PH40S
OCR Text ...rwise specified) V(BR)CES V(BR)ecs V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 -- Emitter-to-Collector Breakdown Voltage 18 -- Temperature Coeff. of Breakdown...
Description Insulated Gate Bipolar Transistors (IGBTs)(标准速度绝缘栅型双极型晶体管) 绝缘门双极晶体管IGBTs)(标准速度绝缘栅型双极型晶体管

File Size 125.72K  /  8 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
OCR Text ...rwise specified) V(BR)CES V(BR)ecs V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakd...
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    Motorola
Part No. MC9S12DP512 MC9S12B256
OCR Text ...5 PIX0 PIX1 PIX2 PIX3 PIX4 PIX5 ecs IOC0 IOC1 IOC2 IOC3 IOC4 IOC5 IOC6 IOC7 KWP0 KWP1 KWP2 KWP3 KWP4 KWP5 KWP6 KWP7 RXD TXD RXD TXD AD Single-wire Background Debug Module Clock and Reset Generation Module CPU12 DDRK PPAGE ...
Description 16-Bit Automotive Microcontroller
From old datasheet system

File Size 76.84K  /  12 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP20N60U_D ON1866 MGP20N60U ON1865
OCR Text ...C Mhos Vdc V(BR)CES 600 -- V(BR)ecs ICES -- -- IGES -- -- -- -- 10 200 50 Adc 15 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit mJ ns mJ nC 2 Motorola IGBT Device Data MGP20N60U 60 17.5 V IC , COLLECTOR CURREN...
Description IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor

File Size 116.77K  /  5 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW20N120_D ON1922 MGW20N120
OCR Text ... Mhos Vdc V(BR)CES 1200 -- V(BR)ecs ICES -- -- IGES -- -- -- -- 100 2500 250 nAdc 25 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit 2 Motorola IGBT Device Data MGW20N120 TYPICAL ELECTRICAL CHARACTERISTICS 60 TJ = 25C...
Description Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS

File Size 135.63K  /  5 Page

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    Maxim
Part No. DS3254DK
OCR Text ... 08052R104K7B20D 12061A220KAT2A ecs-T1CD686R ECU-V1H473KBW 1N4001 LN1251C LN1351C S2012-05-ND 31-5431 747459-1 TSW-125-07-T-D 164-6219 164-6218 CP-BNCPC-002 N/A N/A UP1B-220 ERJ-6ENF3320V ERJ-6ENF33R2V ERJ-6GEY0R00V 29 1 1 12 4 2 10kW...
Description Quad DS3/E3/STS-1 LIU Demo Kit
From old datasheet system

File Size 569.44K  /  13 Page

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    IRGBF30F

International Rectifier
Part No. IRGBF30F
OCR Text ...ise specified) J V(BR)CES V(BR)ecs V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Min. Typ. Max. Units Conditions 900 -- -- V VGE = 0V, IC = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.83 -- V/C VGE = 0V, IC = 1.0mA -- 2.6 3.7...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 102.65K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP11N60E_D ON1851 MGP11N60E ON1848
OCR Text ...C Mhos Vdc V(BR)CES 600 -- V(BR)ecs ICES -- -- IGES -- -- -- -- 10 200 50 15 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit mAdc 2 Motorola IGBT Device Data MGP11N60E 25 IC , COLLECTOR CURRENT (AMPS) TJ = 25C 20 20...
Description From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 116.41K  /  5 Page

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    ONSEMI[ON Semiconductor]
Part No. MGP21N60E_D ON1869 MGP21N60E ON1868
OCR Text ...C Mhos Vdc V(BR)CES 600 -- V(BR)ecs ICES -- -- IGES -- -- -- -- 10 200 50 15 -- 870 -- -- -- -- Vdc mV/C Vdc Adc Symbol Min Typ Max Unit mAdc 2 Motorola IGBT Device Data MGP21N60E 60 TJ = 25C IC , COLLECTOR CURRENT (AMPS) 17.5 ...
Description IGBT IN TO-220 21 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor

File Size 119.33K  /  5 Page

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For ecs Found Datasheets File :: 828    Search Time::1.547ms    
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