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SEME-LAB[Seme LAB]
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Part No. |
SML80L27 SML20L100 SML40L57 SML60L38
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OCR Text |
... ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/ms IS = - ID [Cont.] , dls / dt = 100A/ms 850 22 Min. Typ. Max. Unit 27 A 108 1.3 V ns
mC
Max. Unit 0.24 C/W 40
THERMAL CHARACTERISTICS
RqJC RqJA Characteristic Junction to Case Juncti... |
Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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File Size |
20.05K /
2 Page |
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SemeLAB SEME-LAB[Seme LAB]
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Part No. |
SML80J44 SML80J25
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OCR Text |
... ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/ms IS = - ID [Cont.] , dls / dt = 100A/ms 1000 34 Min. Typ. Max. Unit 44 A 176 1.3 V ns
mC
Max. Unit 0.18 C/W 40
THERMAL CHARACTERISTICS
RqJC RqJA Characteristic Junction to Case Junct... |
Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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File Size |
23.99K /
2 Page |
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TT electronics Semelab, Ltd. Seme LAB
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Part No. |
SML20W65 SML20B56
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OCR Text |
... ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s IS = - ID [Cont.] , dls / dt = 100A/s Min. 330 5.8 Typ. Max. Unit 65 A 260 1.7 V ns C
THERMAL CHARACTERISTICS
RJC RJA Characteristic Junction to Case Junction to Ambient Typ. Max. Unit 0... |
Description |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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File Size |
25.85K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB]
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Part No. |
SML80J28
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OCR Text |
... ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/ms IS = - ID [Cont.] , dls / dt = 100A/ms 1050 20 Min. Typ. Max. Unit 28 A 112 1.3 V ns
mC
Max. Unit 0.25 C/W 40
THERMAL CHARACTERISTICS
RqJC RqJA Characteristic Junction to Case Junct... |
Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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File Size |
23.98K /
2 Page |
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it Online |
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TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
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Part No. |
SML80H14
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OCR Text |
... ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s IS = - ID [Cont.] , dls / dt = 100A/s 750 11 Min. Typ. Max. Unit 13.5 A 54 1.3 V ns C
THERMAL CHARACTERISTICS
RJC RJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Ra... |
Description |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
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File Size |
26.04K /
2 Page |
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it Online |
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Price and Availability
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