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IRF[International Rectifier]
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| Part No. |
IRFIB5N50L
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| OCR Text |
...s and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler dr...0A, VGS = 0V TJ = 25C, IF = 4.0A TJ = 125C, di/dt = 100A/s TJ = 125C, di/dt = 100A/s TJ = 25C
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| Description |
MOTOR Control Application
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| File Size |
182.66K /
9 Page |
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IRF[International Rectifier]
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| Part No. |
IRFIB5N50LPBF
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| OCR Text |
...s and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler dr...0A, VGS = 0V TJ = 25C, IF = 4.0A TJ = 125C, di/dt = 100A/s TJ = 125C, di/dt = 100A/s TJ = 25C
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| Description |
SMPS MOSFET
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| File Size |
175.70K /
9 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRFD310
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| OCR Text |
...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
...0A -- -- 3.4 nC VDS = 320V -- -- 8.5 VGS = 10V, See Fig. 6 and 13 -- 8.0 -- VDD = 200V -- 9.9 -- ID ... |
| Description |
Power MOSFET(Vdss=400V/ Rds(on)=3.6ohm/ Id=0.35A)
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)
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| File Size |
414.42K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF9520NPBF
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| OCR Text |
...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...0A -4.0 V VDS = V GS, ID = -250A S VDS = -50V, ID = -4.0A -25 VDS = -100V, VGS = 0V A -250 VDS = -... |
| Description |
HEXFET POWER MOSFET
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| File Size |
154.19K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF840AS_04 IRF840AL IRF840ALPBF IRF840AS IRF840ASPBF IRF840AS04
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| OCR Text |
...tor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...0A 9.0 nC VDS = 400V 18 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- RG = 9.1 -... |
| Description |
SMPS MOSFET HEXFET? Power MOSFET
SMPS MOSFET HEXFET㈢ Power MOSFET
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| File Size |
662.55K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF830A
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| OCR Text |
...tor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...0A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS... |
| Description |
HEXFET Power MOSFET
SMPS MOSFET
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| File Size |
106.25K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF7907PBF
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| OCR Text |
...ax. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free
VDSS
30V
RDS(on) max
Q1 16.4m:@VGS = 10V Q2 ...0A VDS = 15V, ID = 8.8A
RDS(on)
Static Drain-to-Source On-Resistance
e e e e
nC
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| Description |
HEXFETR Power MOSFET
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| File Size |
291.53K /
10 Page |
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SANYO
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| Part No. |
CPH5803
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| OCR Text |
diode (sbs004m) contained in one package facilitating high-density mounting. [mosfet] ? low on-resistance. ? ultrahigh-speed switching. ? 1....0a i d =0.5a 2.5v 3.0v 4.0v 6.0v 10.0v i d =1.0a, v gs =4.0v i d =0.5a, v gs =2.5v 7 5 3 2 10 100 7 ... |
| Description |
Nch SBD
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| File Size |
40.48K /
5 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL630
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| OCR Text |
...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds ...0A 5.5 nC VDS = 160V 24 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V ns --- ID = 9.0A --- RG = 6.0 --... |
| Description |
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
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| File Size |
282.67K /
8 Page |
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it Online |
Download Datasheet |
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