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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-18A FS7KM-18
OCR Text	...ltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 900 30 7 21 40 -55 ~ +150 -55 ~ +150 2000 2...
Description	HIGH-SPEED SWITCHING USE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text	...ltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 900 30 7 21 40 -55 ~ +150 -55 ~ +150 2000 2...
Description	Fairchild Power Switch(FPS) Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-5
OCR Text	...ltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 250 30 7 21 30 -55 ~ +150 -55 ~ +150 Uni...
Description	HIGH-SPEED SWITCHING USE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	PB-IRLU7843 IRLR7843TRL
OCR Text	...rized avalanche voltage and current high frequency synchronous buck converters for computer processor power high frequency isola...source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v...
Description	Leaded 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package Leaded 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	221.88K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLI3615PBF
OCR Text	... @ t c = 25c continuous drain current, v gs @ 10v 14 i d @ t c = 100c continuous drain current, v gs @ 10v 9.8 a i dm pulsed dra...source voltage 16 v e as single pulse avalanche energy 340 mj i ar avalanche current 8.4 a e ar...
Description	150V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
File Size	176.61K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHN9150SCS
OCR Text	current -22 i d @ v gs = -12v, t c = 100c continuous drain current -14 i dm pulsed drain current -88 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse ava...
Description	-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
File Size	170.85K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ46NLPBF
OCR Text	... @ t c = 25c continuous drain current, v gs @ 10v 53 i d @ t c = 100c continuous drain current, v gs @ 10v 37 a i dm pulsed...source voltage 20 v i ar avalanche current 28 a e ar repetitive avalanche energy 11 mj dv/dt ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	842.74K / 11 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFD1N60F HFU1N60F
OCR Text	...-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 1.0 a drain current ? continuous (t c = 100 e )...source voltage 30 v e as single pulsed avalanche energy (note 2) 33 mj i ar avalanche current (not...
Description	600V N-Channel MOSFET
File Size	210.96K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQD1N60CTM
OCR Text	...-source voltage 600 v i d drain current - continuous (t c = 25c) 1a - continuous (t c = 100c) 0.6 a i dm drain current - pulsed (note 1) 4a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 33 mj i ar avalanc...
Description	N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 Ω
File Size	542.58K / 9 Page	View it Online	Download Datasheet

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