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  752.045 Datasheet PDF File

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    IXGH28N120B IXGT28N120B

IXYS Corporation
Part No. IXGH28N120B IXGT28N120B
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. pate...
Description High Voltage IGBT
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT

File Size 570.88K  /  5 Page

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    IXTH1N100 IXTT1N100

IXYS Corporation
Part No. IXTH1N100 IXTT1N100
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 6,306,728B1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the follow...
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MOSFET

File Size 71.70K  /  2 Page

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    NE32100001 NE321000

California Eastern Labs
Part No. NE32100001 NE321000
OCR Text ...0.532 0.584 0.636 0.681 0.723 0.752 0.771 0.771 0.760 0.749 0.722 0.719 0.686 0.630 0.689 0.719 0.729 0.743 ANG -15.88 -24.04 -32.49 -41.18 ...045 0.059 0.072 0.087 0.097 0.107 0.116 0.125 0.132 0.140 0.146 0.153 0.160 0.166 0.174 0.183 0.194 ...
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

File Size 122.23K  /  6 Page

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    SGSIF444 SGSIF344

STMICROELECTRONICS[STMicroelectronics]
Part No. SGSIF444 SGSIF344
OCR Text ...0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D ...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

File Size 89.25K  /  7 Page

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q
OCR Text ...4 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,83...
Description N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 85.93K  /  4 Page

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    EPA018A-70

List of Unclassifed Manufacturers
ETC
Excelics Semiconductor, Inc.
Part No. EPA018A-70
OCR Text ...731 16.7 0.783 7.8 0.771 -2.6 0.752 -20.8 0.776 -37.7 0.756 -48.6 0.742 -62.4 6V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 5.081 162.1 0...045 2.0 3.097 -15.8 0.049 -0.6 2.873 -31.1 0.050 -6.1 2.805 -46.4 0.055 -13.0 2.730 -62.7 0.059 -20....
Description High Efficiency Heterojunction Power FET

File Size 19.02K  /  2 Page

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    STV7618WAF STV7618 STV7618_WAF STV7618/WAF

STMicroelectronics
Part No. STV7618WAF STV7618 STV7618_WAF STV7618/WAF
OCR Text ...8.182 -1351.372 -1454.562 -1557.752 -1660.942 -1764.132 -1867.322 -1970.512 -2073.702 Size:x 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 90 SIze: y 75 75 75 75 7...
Description PLASMA DISPLAY PANEL DATA DRIVER

File Size 124.50K  /  16 Page

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    hitachi
Part No. 2SC4229
OCR Text ...0.809 0.799 0.788 0.777 0.765 0.752 ANG. -6.3 -6.9 -8.0 -9.3 -10.7 -12.4 -14.0 -15.7 -17.3 -18.8 9 2SC4229 Y Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 2 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (...
Description Silicon NPN Epitaxial
From old datasheet system

File Size 79.36K  /  14 Page

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