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7.3ma Datasheet PDF File

For 7.3ma Found Datasheets File :: 12091 Search Time::2.407ms
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				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	...--- --- --- --- 15 67 51 51 4.5 7.5 1300 400 240 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.1...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	...12 -8.5 -48 3.8 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance ...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	.... -12 -8.5 -48 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Th...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...--- --- --- --- --- 13 55 30 41 7.5 620 280 140 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.10...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...--- --- --- --- 13 55 30 41 4.5 7.5 620 280 140 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.1...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				KODENSHI[KODENSHI KOREA CORP.] Kodenshi Corp
Part No.	K4N33
OCR Text	7.62 6 5 4 These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor in a 6-...3mA 1 Collector Current IC (mA) 60 80 100 100 VCE=24V 0.1 I F=2mA 80 60 40 20 ...
Description	Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
File Size	223.79K / 3 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...tained by contact with Samsung. 7. tRHZ is divide into tRHZ and tOH.(page 12) - tRHZ : RE High to Output Hi-Z - tOH : RE High to Output Hold 8. tCHZ is divide into tCHZ and tOH.(page 12) - tCHZ : CE High to Output Hi-Z - tOH : CE High to Ou...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 ST Microelectronics
Part No.	L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33-L4973D51 L4973D5 L4973D5.1 L4973D51 LV4973D L4973 L4973V5.1 L4973V51 -L4973D33-L4973D51
OCR Text	... VCC (8V to 55V) ROSC CIN C2 7 8 10 12 CBOOT VO(3.3V or 5.1V) L1 1 4,5,6, 13,14,15 16 L4973 17 9 3 11 2 RCOMP COSC ...3mA no load, Vsync = 4.5V 3.5 0.15 4 0.20 0.25 4.5 0.35 0.9 0.45 0.78 1.9 9 95 0.85 2.1 9.6 97 0.92 ...
Description	RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器 3.5A STEP DOWN SWITCHING REGULATOR
File Size	221.38K / 16 Page	View it Online	Download Datasheet

				MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
Part No.	MAX1036 MAX1036EKA- MAX1036-MAX1039 MAX1037 MAX1037EKA- MAX1038 MAX1038AEEE MAX1039 MAX1039AEEE MAX1036EKA MAX1037EKA MAX1036EKA-T
OCR Text	...(TA = +70C) 8-Pin SOT23 (derate 7.1mW/C above +70C).............567mW 16-Pin QSOP (derate 8.3mW/C above +70C).........666.7mW Operating Temp...3mA VIN = 0 to VDD 15 0.4 0.1 x VDD 10 (Note 9) fSAMPLE = 188ksps 0.7 x VDD 0.3 x VDD 1.0 14 VDD 30 ...
Description	2.7-5.5V; low power, 4-/12-channel 2-wire serial 8-bit ADC. For hand-held portable applications, medical instrumnets, battery-powered test equipment, solar-powered remote systems, received-signal-strength indicators, system supervision " 2.7V to 5.5V, Low-Power, 4-/12-Channel 2-Wire Serial 8-Bit ADCs" -2.7V to 5.5V, Low-Power, 4-/12-Channel 2-Wire Serial 8-Bit ADCs 2.7V to 5.5V / Low-Power / 4-/12-Channel 2-Wire Serial 8-Bit ADCs
File Size	423.60K / 22 Page	View it Online	Download Datasheet

For 7.3ma Found Datasheets File :: 12091 Search Time::2.407ms
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